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Nexperia BSH111BKR
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Nexperia BSH111BKR
- Type
- NEXPERIA
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- NEXPERIA
- Electronic Component
- BSH111BKR
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0003131698
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 364mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 55V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：BSH111BKR N通道MOSFET
BSH111BKR是由Nexperia（安世）公司生产的一款高性能N通道金属氧化物半导体场效应管（MOSFET）。它以其出色的电气特性和宽广的应用场景，成为众多电子电路设计中不可或缺的重要元器件。
基本参数
- FET 类型：N通道
- 漏源电压（Vdss）：55V
- 连续漏极电流（Id）：210mA（在25°C的环境温度下）
- 驱动电压：在4.5V下，趋近最大导通电阻（Rds On），实现高效导通。
- 最大导通电阻（Rds On）：4欧姆（@200mA，4.5V）
- 漏极阈值电压（Vgs(th)）：在250µA时，最大值为1.3V
- 栅极电荷（Qg）：在4.5V条件下，最大值为0.5nC，表现出较低的驱动功耗。
- Vgs（最大值）：±10V，允许在广泛的应用中灵活使用。
- 输入电容（Ciss）：在30V时，最多可达30pF，适合高频信号。
- 功率耗散（Pmax）：302mW（在25°C环境下）
- 工作温度范围：-55°C至150°C，适应各种严苛环境条件。
- 封装类型：表面贴装型，符合TO-236AB规格。
- 器件封装：TO-236-3（也称SC-59或SOT-23-3），适合于空间受限的应用。
性能优势
BSH111BKR具备高效率和良好的热管理性能，尤其适合用于低功耗设备中。其较低的导通电阻和电流阈值，使得它在小信号处理和功率转换应用中表现突出。MOSFET的N通道设计使其在开关领域具备更低的开关损耗，同时提供更高的导通效率。
在现代电子设计中，BSH111BKR可广泛应用于各种电源管理和开关电路，例如：
- 电池管理系统：用于实现动态负载开关，延长电池使用寿命。
- 信号调理电路：作为信号放大器或开关，适用于传感器接口。
- LED驱动电路：控制LED的开关和调亮度，使得照明系统更加高效。
- 无线通信设备：在RF应用中，能够显著改善信号的灵敏度和强度。
工业应用
凭借其卓越的电气性和耐用性，BSH111BKR在工业应用领域也被广泛采用，如工业控制、自动化设备、机器人技术、以及高温环境中的医疗设备等。此外，由于其宽工作温度范围，该器件在极端环境下的可靠性使其适合航空航天和汽车电子等领域。
小结
总而言之，BSH111BKR N通道MOSFET以其优异的电特性和多功能应用能力，成为电子设计中的理想选择。Nexperia凭借良好的制造工艺和严格的质量控制，使得BSH111BKR具有高度可靠性，为用户提供了保障。无论是在消费类电子产品还是工业级设备中，该MOSFET都能为设计师和工程师提供高效、经济的解决方案，助力现代电子技术的发展。
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