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Nexperia PMV20ENR
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Nexperia PMV20ENR
- Type
- NEXPERIA
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- NEXPERIA
- Electronic Component
- PMV20ENR
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.017g
- Electronic Component
- 1
- Electronic Component
- BM0000288190
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.2W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PMV20ENR 产品概述
PMV20ENR 是一款由安世（Nexperia）公司制造的高性能 N 沟道金属氧化物半导体场效应晶体管（MOSFET）。该器件专为需要高效率和高性能的电子应用而设计，具有出色的导电性能和适应性。其重要参数和特性使其适用于多种领域，如电源管理、开关电源、电池管理系统及其他高频开关应用。
主要技术参数
漏源电压（Vdss）: PMV20ENR 的最大漏源电压为 30V，使其能够在中高压条件下可靠工作，为设计师在应用中提供了相对宽松的安全裕度。
连续漏极电流（Id）: 在 25°C 的工作环境下，该器件的持续漏极电流能力达到 6A，能够处理不同的负载条件。
栅源极阈值电压（Vgs(th)）: PMV20ENR 的阈值电压为 2V @ 250µA，这意味着在较低的栅电压下就可以开始导通，适合低电压驱动应用。
漏源导通电阻（Rds(on)）: 在 6A 和 10V 的条件下，该 MOSFET 的导通电阻仅为 21毫欧，保证了在导通状态下低功耗和高效率。
驱动电压: 该器件可以在 4.5V 至 10V 的驱动电压范围内工作，为不同的应用场景提供了灵活性。
功率耗散: PMV20ENR 的最大功率耗散能力为 510mW（在 25°C 时），而在结温（Tc）情况下可达 6.94W，确保在高负载条件下依然能够安全运行。
工作温度: 器件的工作温度范围广泛，从 -55°C 到 150°C，可确保在恶劣环境下的可靠性。
封装类型: PMV20ENR 使用 SOT-23-3 封装形式，适合于表面贴装（SMD），便于自动化生产和产品小型化设计。
电容特性: 输入电容（Ciss）为 435pF @ 15V，栅极电荷（Qg）为 10.8nC @ 10V，表明该器件具有快速的开关能力，适合高频应用。
应用领域
PMV20ENR 作为一款性能优异的 N 沟道 MOSFET，适合广泛的应用场景，包括：
- 电源管理: 在开关电源和线性电源中作为开关元件，能够有效降低能量损耗。
- 电池管理系统: 在充放电过程中动态调节电流，确保电池的安全性与高效性。
- 负载驱动: 适用于微控制器、传感器和其他低功耗设备的负载驱动。
- 汽车电子: 由于其宽工作温度范围和高可靠性，PMV20ENR 适合用于汽车电子控制系统。
总结
总体而言，PMV20ENR 是一款高度集成的 N 沟道 MOSFET，凭借其优越的电性能和耐受力，为现代电子设备的设计提供了极大的便利。无论是在电源管理还是作为电池管理系统的核心组件，它都能够以其高效的开关特性和可靠性，为客户提供卓越的性能支持。在设计中，使用 PMV20ENR 将提升电路的整体性能，使设备在功率消耗、温度管理和操作性能上都能达到最佳状态。
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