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Nexperia BC847C-QR BC847C
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Nexperia BC847C-QR
- Type
- NEXPERIA
- Unit
- Electronic Component
- Minimum package
- 3000 袋
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- NEXPERIA
- Electronic Component
- BC847C-QR
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.025g
- Electronic Component
- 1
- Electronic Component
- BM0227554101
- Operating Temperature
- 65℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 100MHz
- Power Dissipation(Pd)
- 250mW
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
Nexperia BC847C-QR NPN预偏置晶体管产品概述
一、产品基本属性
BC847C-QR是Nexperia（安世半导体）推出的一款小型化NPN型预偏置晶体管，采用SOT-23表面贴装封装，属于通用型小信号有源器件。其核心定位为高增益、低功耗、宽温范围，适配消费电子、工业控制、汽车电子等多领域的放大与开关控制需求，是电路设计中替代传统离散偏置方案的高效选择。
二、核心电性能参数
BC847C-QR的参数经过优化，兼顾线性放大与开关特性，关键指标清晰：
- 电流与功率规格：最大集电极电流（Ic）100mA，最大耗散功率（Pd）250mW，可稳定处理中小功率信号，避免过流/过功率损坏；
- 电压击穿特性：集射极击穿电压（Vceo）45V，射基极击穿电压（Vebo）6V，确保高电压环境下的反向可靠性；
- 增益与频率特性：直流电流增益（hFE）在10mA、5V条件下达420，特征频率（fT）100MHz，中频信号放大线性度与响应速度优异；
- 饱和与截止特性：集射极饱和电压（VCE(sat)）仅200mV，开关损耗极低；集电极截止电流（Icbo）5μA，漏电流小、截止噪声低，适合低噪声电路。
三、封装与工作环境
BC847C-QR采用SOT-23小型表面贴装封装，典型尺寸约2.9mm×1.6mm×1.1mm，适配高密度PCB布局，满足便携式设备的小型化需求。其工作温度范围覆盖**-65℃至+150℃**，远超普通民用器件阈值，可稳定工作于极端环境（如户外工业现场、汽车发动机舱附近电路），无需额外温度补偿。
四、典型应用场景
- 小信号放大电路：高hFE（420@10mA）与100MHz fT使其适合音频前置放大、传感器（温度/压力）微弱信号放大，提升信噪比；
- 低功耗开关控制：200mV低饱和电压可作为逻辑电平开关（5V/3.3V转换）、LED驱动辅助开关，降低功耗；
- 便携式电子设备：SOT-23封装集成于智能手机、智能手表的电源管理、触控检测电路；
- 工业与汽车电子：宽温范围适配冷库、高温车间等工业场景，及车载传感器接口电路。
五、品牌与可靠性优势
Nexperia的成熟硅工艺确保BC847C-QR批次一致性高，参数波动小；符合RoHS/REACH环保标准，适配绿色设计；小漏电流、宽电压击穿特性提升长期可靠性，减少电路故障风险，是稳定可靠的基础器件选择。
该器件以高性价比、多场景适配性，成为电子设计中NPN晶体管的常用选型之一。
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