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Nexperia BZT52H-C8V2,115 BZT52H
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Nexperia BZT52H-C8V2, 115
- Type
- NEXPERIA
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- NEXPERIA
- Electronic Component
- BZT52H-C8V2,115
- Electronic Component
- 1
- Package
- SOD-123F
- Electronic Component
- Zener Diode
- Electronic Component
- 0.049g
- Electronic Component
- 1
- (Zzt)
- 10Ω
- Electronic Component
- BM0089665179
- Diode
- 1
- Current(Ir)
- 700nA@5V
- Power Dissipation(Pd)
- 830mW
- Electronic Component
- 7.7V~8.7V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：BZT52H-C8V2,115
概述
BZT52H-C8V2,115是一款高性能的稳压二极管，设计用于电子电路中提供精确的电压调节。该产品由Nexperia（安世）制造，具有紧凑的SOD-123F封装，适合表面贴装应用，广泛应用于电源管理、信号调节和电路保护等场景。
关键参数
标称齐纳电压（Vz）: 8.2V
该齐纳二极管的标称电压为8.2V，表示其在反向偏置条件下能够稳定输出的电压，用于稳压电路。容差: ±5%
该二极管的电压容差为±5%，确保该元器件在不同的应用条件下具有一定的可靠性和一致性。最大功率: 375mW
BZT52H-C8V2,115的最大功率达到375毫瓦。这意味着该二极管能够在规定的电压范围内有效散热，确保其在较高功率条件下的稳定性。阻抗（Zzt）: 10Ω
该二极管的动态阻抗小于10欧姆，使其在快速电压变化时保持良好的性能，十分适合快速响应的电源电路。反向泄漏电流: 700nA @ 5V
当反向电压为5V时，反向泄漏电流仅为700纳安，这表明该元器件在非导通状态下能有效降低功耗，提高整体电路的效率。正向电压（Vf）: 900mV @ 10mA
该型号在10毫安正向电流条件下，其正向电压为900毫伏。这保证了二极管在导通状态下的控制和效率。工作温度范围: -65°C ~ 150°C
广泛的工作温度范围使其能够在各种恶劣环境中稳定工作，适用于工业、汽车及航空领域的电子设备。封装与安装: SOD-123F表面贴装型
SOD-123F封装使得该稳压二极管在PCB布线中占用空间小，适合高密度布板设计。
应用场景
BZT52H-C8V2,115广泛应用于以下领域：
- 电源管理: 用于稳压电源电路，确保输出电压稳定。
- 信号调节: 用于限制信号电压，保护后续元器件。
- 电路保护: 作为过压保护元件，避免瞬态过电压对敏感器件的损害。
- 汽车电子: 在汽车电气设备中，用于电源稳压与滤波。
- 消费电子: 在智能手机、平板电脑与家用电器中，用于提升电源稳定性。
总结
BZT52H-C8V2,115是一款性能优异、应用广泛的稳压二极管，凭借其稳定的电压输出、低功耗特点和宽工作温度范围，使其成为各类电子设计中不可或缺的元件之一。无论是在高要求的工业应用还是在消费电子产品中，BZT52H-C8V2,115都能有效满足各类电子设备的稳压需求，确保系统的稳定性和可靠性。
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