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Nexperia BC817-40QAZ BC817
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Nexperia BC817-40QAZ
- Type
- NEXPERIA
- Unit
- Electronic Component
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- NEXPERIA
- Electronic Component
- BC817-40QAZ
- Electronic Component
- 1
- Package
- DFN-3(1x1)
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.015g
- Electronic Component
- 1
- Electronic Component
- BM0058404954
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 100MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BC817-40QAZ 产品概述
一、产品简介
BC817-40QAZ 是安世半导体（Nexperia）提供的一款单个NPN硅双极型晶体管，采用 DFN-3 (1×1 mm) 超小型封装，面向空间受限的消费电子与工业应用。器件设计兼顾开关与低功耗放大功能，适合高密度贴片电路使用。
二、主要参数
- 晶体管类型：NPN，数量：1个
- 集电极击穿电压 Vceo：45 V
- 连续集电极电流 Ic：500 mA
- 直流电流增益 hFE：250（测试条件 100 mA, VCE=1 V）
- 特征频率 fT：100 MHz
- 集电极截止电流 Icbo：≈5 μA
- 发射—基极击穿电压 Vebo：5 V
- 集电极—发射极耗散功率 Pd：300 mW
- 集电极饱和电压 VCE(sat)：约 700 mV（具体测试条件请参见数据手册）
- 工作温度范围：-55 ℃ ~ +150 ℃
三、器件特性与优势
该器件具备较高的直流增益（在 100 mA 时 hFE≈250），适于在较高电流工作点保持良好放大作用。100 MHz 的特征频率使其在高频小信号放大与开关应用中表现可靠。DFN-3(1×1) 封装提供良好封装密度，适合集成到紧凑 PCB 设计中，同时便于自动贴装和回流焊接。
四、典型应用场景
- 便携式与手持设备中的开关、驱动与缓冲电路
- 小功率马达或继电器驱动（需注意功耗与散热限制）
- 信号放大与接口缓冲（高频小信号）
- 功率受限的模拟前端与电平转换电路
五、封装与热管理建议
DFN-3(1×1) 超小封装在热阻较大时需通过 PCB 铜箔增强散热。建议在焊盘下方与周围使用适量散热铜层并通过过孔连接内部层以降低结壳温升。器件最大耗散功率仅 300 mW，长期工作时应留有裕量，避免在高环境温度下连续大电流工作。
六、选型与使用注意
选择时应关注实际工作电流与功耗，确保不超过 Ic=500 mA 与 Pd=300 mW 的限制。Vebo=5 V 提示基极-发射极间耐压较低，静电与反向电压保护需到位。VCE(sat) 在近饱和区域有一定压降（约 700 mV），在对功耗敏感的负载驱动场合应评估效率影响。详细的测试条件和典型曲线请参照 Nexperia 的原厂数据手册以获得精确设计数据。
如需进一步对比封装、环境适应性或在具体电路中的仿真建议，可提供电路工作点与 PCB 布局图以便给出更具体的设计优化方案。
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