WMSIC Electronic Components

Nexperia PMXB75UPEZ

ModelPMXB75UPEZ
PackageDFN1010D-3
BrandNexperia
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Nexperia PMXB75UPEZ
Type
NEXPERIA
Unit
Electronic Component
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
NEXPERIA
Electronic Component
PMXB75UPEZ
Electronic Component
1
Package
DFN1010D-3
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.014g
Electronic Component
1
Electronic Component
BM0089665181
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
317mW
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PMXB75UPEZ 产品概述

概述

PMXB75UPEZ 是由 Nexperia USA Inc. 生产的一款高性能 P 通道 MOSFET 元器件,广泛应用于各种电子设备和电路,特别是在需要高效率和可靠性的场景中。该器件采用现代的 MOSFET 技术,具有优秀的电气特性和热性能,适合于各种电源管理、负载开关和信号开关应用。

主要参数

  1. 制造商:Nexperia USA Inc.
  2. 产品状态:有源
  3. 类型:P 通道 MOSFET
  4. 封装:DFN1010D-3(3-XDFN 裸露焊盘)
  5. 安装类型:表面贴装型(SMD)
  6. 最大漏源电压(Vdss):20V
  7. 连续漏极电流(Id):2.9A(在 25°C 环境温度下)
  8. 导通电阻(Rds On):85 毫欧 @ 2.9A,4.5V
  9. 驱动电压:1.2V 至 4.5V
  10. 栅极阈值电压(Vgs(th)):最大 1V @ 250µA
  11. 栅极电压最大值(Vgs):±8V
  12. 功率耗散:317mW(环境温度 Ta)及 8.33W(结温 Tc)
  13. 工作温度范围:-55°C 至 150°C(结温 TJ)
  14. 输入电容(Ciss):最大 608pF @ 10V
  15. 栅极电荷(Qg):最大 12nC @ 4.5V

应用场景

PMXB75UPEZ 的设计使其非常适合于多种应用场景,例如:

  • 电源管理:由于其低导通电阻和高效能,PMXB75UPEZ 可以在电源开关、DC-DC 转换器和其他电源管理电路中使用,以改善系统效率并降低能耗。

  • 负载开关:在负载开关应用中,其快速开关特性和稳定性能能够有效控制电流的流动,确保设备正常运行,并防止过载风险。

  • 信号开关:在需要高频率切换的应用中,PMXB75UPEZ 的低栅极电荷特性使其可以在信号开关电路中发挥良好的性能,确保高速信号传输。

  • 工业电子设备:其宽广的工作温度范围(-55°C 至 150°C)意味着该器件可以在极端环境中运行,非常适合在工业控制、汽车、航空等领域的应用。

性能特征

PMXB75UPEZ 的关键性能使其在现代电子设计中备受青睐。其最大连续漏电流为 2.9A,确保了高负载条件下的稳定性。较低的导通电阻(85 毫欧)以及良好的散热性能,进一步提高了设备的整体效率,并能有效减少能量损耗。

此外,该器件的栅极电压和漏源电压限制确保了其在多种操作条件下的安全性,也大大增强了系统对异常情况的响应能力。其出色的输入电容和栅极电荷特性,使得 PMXB75UPEZ 在高频应用中的表现尤为出色。

结论

总的来说,PMXB75UPEZ 是一款功能强大的 P 通道 MOSFET,凭借其出色的电气特性和灵活的应用范围,满足了现代电子产品对高效率、可靠性和耐磨性的高要求。无论是在电源管理、负载开关还是信号调节等应用中,PMXB75UPEZ 都能为设计者提供极大的方便与安全性,是电子设计中值得信赖的解决方案。

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