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BUK9K52-60E,115是一款高性能双N沟道场效应晶体管(MOSFET),由英特尔旗下的Nexperia(安世)公司研发和生产。此MOSFET专为高效率功率管理应用而设计,能够在广泛的工作条件下保证卓越的性能,其片划线封装(LFPAK56D)使得该器件适用于表面贴装,便于在紧凑的电路设计中应用。
导通电阻(RDS(on)):该器件在特定条件下的导通电阻为49毫欧,测试条件为5A,10V。这一较低的导通电阻使得BUK9K52-60E,115在开关状态下能显著减少功耗和发热,提升整机的能效及稳定性。
漏极电流(Id):BUK9K52-60E,115可在25°C条件下连续承受高达16A的漏极电流,使其适用于需要大电流驱动的应用场景,如电源管理和DC-DC转换器。
漏源电压(Vdss):该MOSFET可在最大60V的漏源电压下安全工作,适用于多种功率转换和开关应用。
栅极阈值电压(Vgs(th)):BUK9K52-60E,115在1mA漏电流下的栅极阈值电压最大为2.1V,此特点使其非常适合逻辑电平控制,进而简化电路设计。
输入电容(Ciss):在25V的测量条件下,该器件的输入电容为725pF,低输入电容可实现更快的开关速度,降低开关损耗。
栅极电荷(Qg):在10V的条件下,BUK9K52-60E,115的栅极电荷最大值为10nC,优异的阈值电压和工作电荷同时保证了较低的驱动功耗。
工作温度范围:该器件能够在-55°C至175°C的宽工作温度范围内正常工作,满足严苛环境下应用的需求,特别适用于汽车电子和工业控制等要求高温稳定性的应用。
BUK9K52-60E,115广泛适用于以下领域:
BUK9K52-60E,115采用SOT-1205封装,符合LFPAK56D标准,具有良好的散热特性和电气性能。此封装形式不仅降低了安装空间,还优化了产品在热管理和电气连接方面的表现。
总结来说,BUK9K52-60E,115 MOSFET凭借其优异的电气性能、广泛的工作温度范围和高效的热管理特性,非常适合于现代电子产品的高效能设计及应用。无论是高效开关电源、工业控制系统还是电动汽车等场景,BUK9K52-60E,115都能为设计工程师提供灵活、可靠的解决方案。
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Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
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