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Nexperia PMPB20XPE,115 PMPB20XPE
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Nexperia PMPB20XPE, 115
- Type
- NEXPERIA
- Unit
- Electronic Component
- Minimum package
- 3000
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- NEXPERIA
- Electronic Component
- PMPB20XPE,115
- Electronic Component
- 1
- Package
- DFN-6(2x2)
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.027g
- Electronic Component
- 1
- Electronic Component
- BM0265831719
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.7W
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 2.945nF
- Gate (Qg)
- [email protected]
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：PMPB20XPE,115 - P沟道MOSFET
1. 产品简介
PMPB20XPE,115 是 Nexperia USA Inc. 制造的一款高性能 P沟道MOSFET（场效应管），以其杰出的电气性能和广泛的应用场景而备受青睐。该器件特别设计为满足各种电源管理和电机驱动等应用要求，广泛应用于消费电子、工业控制和汽车电子等领域。
2. 技术参数
- 制造商: Nexperia USA Inc.
- 零件状态: 有源（Active）
- FET 类型: P沟道 (P-channel)
- 技术类型: MOSFET (金属氧化物半导体场效应管)
- 封装类型: DFN2020MD-6，采用裸露焊盘封装（6-UDFN）
- 最大电流（Id）: 7.2A @ 25°C
- 漏源电压（Vdss）: 20V
- 工作温度范围: -55°C 至 150°C (TJ)
- 功率耗散: 1.7W（在环境温度下）; 12.5W（在结温下）
- 栅极源电压（Vgs）: ±12V
- 导通电阻最大值: 23.5 毫欧（在 7.2A，4.5V 下）
- 最大阈值电压（Vgs(th)）: 900mV @ 250µA
- 栅极电荷（Qg）: 45nC @ 4.5V
- 输入电容（Ciss）: 2945pF @ 10V
3. 关键特性
PMPB20XPE,115 的设计充分考虑了高效能和高可靠性，使其在各种工作条件下依然表现出色。以下是该元件的一些关键特性：
优化的导通电阻: 在 7.2A 的电流下，最大导通电阻仅为 23.5 毫欧。这使得在电流通过时能够有效减少功耗，从而提升系统的整体效率。
宽广的工作温度范围: 产品支持 -55°C 至 150°C 的广泛温度范围，使其适合用于极端环境下的应用。
高度集成和易于安装: DFN2020MD-6 封装不仅减小了占用空间，同时也方便了自动化贴装工艺，适合现代电子产品的设计需求。
高输出能力: 最大 7.2A 的连续漏极电流使得该器件在驱动大功率负载时仍然保持稳定可靠，适用于电源开关、负载驱动等多种场合。
4. 应用方向
PMPB20XPE,115MOSFET广泛应用于以下领域：
电源管理系统: 适合用作电源开关、负载开关，帮助实现高效的电源转换。
电机控制: 该元件可以用于直流电机控制电路，提供精确的高速切换。
汽车电子: 适用于汽车的电池管理和功率控制系统，以确保高效能和安全性。
工业设备: 作为开关元件用于节能和模式切换。
5. 结论
PMPB20XPE,115是Nexperia推出的一款优质P沟道MOSFET，以其极低的导通电阻和宽广的操作温度范围，充分满足现代电子设备对性能和可靠性的严格要求。无论是在电源管理、电机驱动还是其他各种应用场景中，均可提供卓越的解决方案。同时，其紧凑的DFN封装设计，使得集成到各种设备中变得更加方便和高效。这一元件无疑是持续致力于高效电源管理和设备控制的设计工程师的重要选择。
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