WMSIC Electronic Components

NX3DV2567GU,115 NX3DV2567GU

ModelNX3DV2567GU,115
PackageX-QFN-16(1.8x2.6)
BrandNXP
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
NXP NX3DV2567GU, 115
Type
NXP
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
NXP
Electronic Component
NX3DV2567GU,115
Electronic Component
1
Package
X-QFN-16(1.8x2.6)
Electronic Component
160MHz
Electronic Component
Analog Switch / Multiplexer
Electronic Component
0.1g
Electronic Component
1
Channel Count
4
Features
Analog; Level Conversion
Electronic Component
BM0259723341
Operating Temperature
40℃~+125℃
Operating Voltage
1.4V~4.3V
Switch
2:1
(tpd)
45ns

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

NX3DV2567GU,115 产品概述

一、简介

NX3DV2567GU,115 是恩智浦(NXP)面向低电压系统设计的一款四通道模拟/数字信号切换器。器件由两个独立的 2:1 开关电路构成,可实现四路单端信号的选择与传递。器件采用小型 X-QFN-16 (1.8 × 2.6 mm) 封装,适合体积受限的便携式与板上模块化设计;后缀 “,115” 常用于表明出厂包装为卷盘(Tape & Reel),便于自动贴片生产。

二、主要技术参数

  • 开关类型:每路 2:1(两个独立开关电路,总计 4 通道)
  • 工作电压:1.4 V ~ 4.3 V(适配低压和常见单节/双节电池供电系统)
  • 导通电阻 Ron:典型 7 Ω(影响信号幅度与功耗)
  • 导通电容 Con:16 pF(影响高频响应与带宽)
  • 导通时间 ton:45 ns
  • 关闭时间 toff:25 ns
  • 传播延迟 tpd:45 ns(选择路径到输出的延迟)
  • 带宽:160 MHz(在指定条件下的模拟带宽)
  • 工作温度范围:-40 ℃ ~ +125 ℃
  • 封装:X-QFN-16 (1.8 × 2.6 mm)

三、关键特性与优势

  • 低压工作:1.4 V 起的最低供电电压使其可直接用于单电池与低功耗 SOC 外围控制。
  • 快速响应:45 ns 量级的导通/传播延时适合对切换速率有要求的信号路由应用。
  • 低导通阻抗与适中电容:约 7 Ω 的 Ron 在多数数字与低频模拟场景下带来较小的串联损耗;16 pF 的导通电容配合 160 MHz 带宽,能兼顾中高频信号传输。
  • 宽温区与小尺寸:-40~+125 ℃ 的工业级温度与 1.8×2.6 mm 的超小封装,便于在工业、汽车电子及空间受限的消费类产品中部署。

四、典型应用场景

  • 多路信号选择与路由:将多路传感器/前端信号按需切换到 ADC、比较器或处理器输入。
  • 便携/移动设备:低压供电与小封装适合手机、可穿戴和电池供电设备中的音视频或控制信号切换。
  • 通信与测试设备:用于射频前端或中频信号的通道选择(需根据频率与线缆特性评估)。
  • 板载复用/节能控制:通过软控制实现对外设电源或信号路径的断开,降低系统静态功耗(配合器件的控制引脚使用)。

五、设计与使用建议

  • 电源与退耦:建议在器件供电引脚附近放置 0.1 µF 到 1 µF 的陶瓷退耦电容,以抑制切换瞬态并保证工作稳定。
  • 信号完整性考虑:Ron 与 Con 将影响带宽与上升/下降时间;对高频或严格幅频特性的信号,应在仿真或实测中评估插入损耗与相位畸变。
  • 控制时序:注意 ton 与 toff 的不对称性及传播延迟 tpd,在多通道并行切换时需处理好重配置窗口,避免在切换瞬间产生误采样或短暂冲突。
  • PCB 布局:小封装对焊盘与散热提出更高要求。尽量缩短敏感信号走线、提供良好接地平面并为控制线留出匹配的回流路径。
  • 温度与功耗:在高温或连续快速切换场景下,关注器件在实际环境下的 Ron 变化与热沉行为,必要时留出足够安全余量。
  • 双向信号:若用于双向信号或模拟信号切换,应确认信号摆幅与源阻抗是否在器件参数允许范围内,以避免失真或开关非线性。

六、总结

NX3DV2567GU,115 是一款为低电压、体积受限系统优化的四通道 2:1 开关器件,兼顾较低导通阻抗、适中带宽与快速切换能力。凭借工业级温度范围和紧凑封装,适合在便携设备、通信前端、信号路由与测试测量等场景中作为可靠的多路开关解决方案。设计时应结合具体信号特性关注 Ron、Con 对信号完整性的影响,并做好电源退耦与 PCB 布局优化。

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