WMSIC Electronic Components

NCE NCE0110K

ModelNCE0110K
PackageTO-252-2(DPAK)
BrandNCE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
NCE NCE0110K
Type
NCE
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
NCE
Electronic Component
NCE0110K
Electronic Component
1
Package
TO-252-2(DPAK)
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.547g
Electronic Component
1
Electronic Component
BM69419515
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
30W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
100V
Capacitor(Ciss)
690pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:NCE0110K MOSFET

产品名称: NCE0110K
类型: N沟道场效应管 (MOSFET)
功率: 30W
电压: 100V
电流: 9.6A
封装: TO-252-2(DPAK)
品牌: NCE(新洁能)

一、产品简介

NCE0110K是一款高性能的N沟道场效应管,适用于多种电子电路设计中。此MOSFET以其优越的电气特性和稳健的封装设计,在功率管理、开关电源、电机驱动器等应用领域中展现出极大的应用潜力。其较高的工作电压(100V)、大电流(9.6A)和适中的功率(30W)为各种行业提供了可靠的解决方案。

二、关键特性

  1. 高工作电压: NCE0110K能够承受高达100V的电压,适合高电压应用的设计需求,能够在恶劣电压环境下稳定运行。

  2. 大电流承载能力: 最高9.6A的电流承载能力使其适用于需要高负载电流的电路,例如电机控制和高功率放大器。

  3. 高功率密度: 30W的功率使得此器件适合需要高功率转换效率的应用,降低热损失,并提高系统可靠性。

  4. 良好的开关特性: NCE0110K具有较低的导通电阻(Rds(on)),这使得器件在开关过程中产生的热量更少,从而提高了电源的效率与稳定性。

  5. TO-252封装: 采用TO-252-2(DPAK)封装,能够有效散热,并且与 PCB 兼容性良好,便于在各种电路中安装。

三、应用领域

NCE0110K凭借其卓越的性能,适合在以下领域被广泛应用:

  1. 开关电源: MOSFET是构建高效开关电源的关键元件。NCE0110K可以用作主开关元件,从而实现有效的电能转换和管理。

  2. 电机驱动: 在电机控制应用中,与微控制器和驱动电路结合使用,能够高效控制电机的转速与扭矩,适用于电动工具、电动汽车等。

  3. 电池管理系统: 用于电池充电和放电控制,以提高电池的使用效率和延长其使用寿命,特别是在高功率应用环境下。

  4. 音频放大器: 在音频设备的放大电路中,NCE0110K可以作为功率放大器中的开关元件,增强音质表现及音频信号的稳定性。

  5. LED驱动器: 在LED照明和显示应用中,能够以高效的方式控制LED的亮度,并实现动态调光。

四、电气特性

  • 最大漏极源极电压 (Vds): 100V
  • 最大漏极电流 (Ids): 9.6A
  • 导通电阻 (Rds(on)): 具体数值根据产品规格书提供,通常较低以保证高效能。
  • 工作温度范围: 指定的工作温度范围一般在-55℃至150℃,适合严苛的环境。

五、结论

NCE0110K N沟道MOSFET是一款集合高性能、高可靠性和多用途的电子元器件,适合在各种电源管理和开关应用中展现卓越表现。凭借其出色的电气特性和灵活的封装选项,NCE0110K是电路设计师和工程师在追求效率与稳定性过程中的理想选择。通过选用这款MOSFET,设计者可以确保他们的产品能够满足现代电子设备对性能和解决方案的高标准要求。在市场日益竞争激烈的环境中,NCE0110K将帮助用户实现更高效、更可靠的产品设计。

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