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ROHM UMG8NTR
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ROHM UMG8NTR
- Type
- ROHM
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ROHM
- Electronic Component
- UMG8NTR
- Electronic Component
- 1
- Package
- SOT-353-5
- Electronic Component
- 2 NPN
- Electronic Component
- Digital Transistor
- Electronic Component
- 0.024g
- Electronic Component
- 1
- Electronic Component
- BM0257640352
- Resistor
- 10
- Resistor
- 4.7kΩ
- Transistor Type
- NPN
- Frequency(f T)
- 250MHz
- Power Dissipation(Pd)
- 150mW
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
UMG8NTR 产品概述
UMG8NTR 是一款由 ROHM（罗姆）公司出品的高性能数字晶体管，集成了两个 NPN 预偏置式晶体管，主要针对面向消费电子、通信设备和其他低功耗电子产品的应用。其优秀的性能使其在大规模集成和小型化设计中成为一种理想的选择。以下是 UMG8NTR 的详细参数和应用场景分析。
基本参数
UMG8NTR 的额定功率为150mW，具备高达100mA的集电极电流（Ic）能力，最大集射极击穿电压（Vce）可达50V。这些特性使其在处理多种信号和负载时表现得非常可靠。作为表面贴装型 (SMD) 组件，它采用了 SOT-353 封装（UMT5），很适合在空间受到严格限制的设计中使用。
电气特性
UMG8NTR 的直流电流增益（hFE）在不同的集电极电流 (Ic) 下表现出色，最小值为80（@ 10mA, 5V）。这一点确保了其在开关和放大应用中有良好的增益特性，提供了一定的信号放大质量。
在饱和状态下，该晶体管的 Vce 压降最大值为300mV（@ 250µA, 5mA），这对于高效的电路设计至关重要。较低的饱和压降有助于降低功耗，增强系统的整体能效。集电极截止电流（Ic cutoff）最大值仅为500nA，表明其在关闭状态下电流损耗非常小，适合于省电设计。
高频特性
UMG8NTR 的跃迁频率高达250MHz，适合用于在高频条件下的应用，如射频前端和高速开关电路。这种特性使得 UMG8NTR 成为现代通信和数据传输系统中的关键组件，支持高速信号的传递与处理。
设计与应用
UMG8NTR 由于其小巧的 SOT-353 封装，易于在自动贴片机上处理，适合大规模生产和组装。它广泛应用于许多领域，包括但不限于：
消费电子：如智能手机、可穿戴设备、平板电脑等，能够满足紧凑型设备对空间和功耗的苛刻要求。
通信设备：适用于无线通信、蓝牙模块、WiFi 设备等高频电路。
汽车电子：考虑到其耐高温和小型化特点，在汽车控制单元、传感器接口等场合也得到了应用。
电源管理：作为开关管，用于高传输效率的电源转换和管理电路，帮助系统提高能效和稳定性。
工业控制系统：在低功耗自动控制系统中亦有其身影，负责信号的放大与开关控制。
总结
UMG8NTR 是一款兼具高性能与高效率的小型数字晶体管，针对现代电子技术的发展需求，提供了广泛的电气特性和出色的频率性能。ROHM 通过这一产品，展现了其在电子元器件设计和制造领域的领先地位，满足了市场对高集成度和低功耗解决方案的需求。凭借其卓越的性能参数，UMG8NTR 必将在多个领域得到广泛应用，助力于各类电子产品的持续创新与进步。
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