WMSIC Electronic Components

ROHM RZM002P02T2L

ModelRZM002P02T2L
PackageSOT-723
BrandROHM
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ROHM RZM002P02T2L
Type
ROHM
Unit
Electronic Component
Minimum package
8000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ROHM
Electronic Component
RZM002P02T2L
Electronic Component
1
Package
SOT-723
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.01g
Electronic Component
1
Electronic Component
BM0000282653
Power Dissipation(Pd)
150mW
Electronic Component
Electronic Component
Electronic Component
8000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

RZM002P02T2L 产品概述

一、基本介绍

RZM002P02T2L 是一款由罗姆(ROHM)公司制造的 P 沟道金属氧化物半导体场效应晶体管(MOSFET),该产品采用 SOT-723 封装形式,意在为各种低功耗与小型化电子设备提供高效的电源开关解决方案。其最大漏源电压为 20V,能够承载高达 200mA 的连续漏极电流,兼具较低的导通电阻和较高的工作温度,适合于多种工业与消费类电子应用。

二、核心参数

RZM002P02T2L 的主要参数如下:

  1. 漏源电压(Vdss):20V
  2. 连续漏极电流(Id):200mA @ 25°C
  3. 栅源极阈值电压(Vgs(th)):1V @ 100µA
  4. 漏源导通电阻(Rds On):1.2Ω @ 200mA, 4.5V
  5. 最大功率耗散(Ta=25°C):150mW
  6. 工作温度范围:最高可达 150°C
  7. 封装类型:SOT-723(VMT3)

三、性能特点

  1. 低导通电阻:在 200mA 电流下的导通电阻为 1.2Ω,这意味着在开关状态下有较低的功率损耗,提高了电源的整体效率。相对较低的 Rds On 值使得 RZM002P02T2L 非常适合用于电源切换与电流控制。

  2. 广泛的栅源电压:该 MOSFET 的栅源极阈值电压(Vgs(th))为 1V,意味着其能够在较低的电压下开启,简化控制电路的设计。此外,最大 Vgs 为 ±10V,增加了在各种应用中工作的灵活性。

  3. 高温工作能力:RZM002P02T2L 的工作温度可达 150°C,极大程度上扩展了其在高温环境下的应用范围,特别适合汽车电子、工业自动化以及高温处理设备。

  4. 紧凑的封装设计: SOT-723 封装使这款 MOSFET 在空间要求严格的电子设备中使用,如移动设备、便携式工具及传感器模块。

四、应用场景

RZM002P02T2L P 沟道 MOSFET 可广泛应用于多个领域,包括但不限于:

  1. 电源管理:在开关电源中作为开关元件,能够提供高效的电源转换。
  2. 负载切换:用于控制负载的开关,例如在LED驱动或电机控制电路中。
  3. 电池管理系统:在电池充电与放电过程中的开关控制,起到保护电池和延长电池寿命的作用。
  4. 信号切换:在数据通讯设备中进行信号的切换,稳定数据传输。

五、总结

罗姆的 RZM002P02T2L 是一款性能优异的 P 沟道 MOSFET,以其出色的导通特性、较高的工作温度、结合紧凑的封装设计,为现代电子产品提供了理想的解决方案。无论是用于电源管理、负载切换还是电池管理,其可靠性和经济性都使得 RZM002P02T2L 成为设计工程师们的优选组件。随着电子设备日趋小型化与智能化,未来 RZM002P02T2L 的应用潜力将更加广泛。

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