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ROHM RU1J002YNTCL
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ROHM RU1J002YNTCL
- Type
- ROHM
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ROHM
- Electronic Component
- RU1J002YNTCL
- Electronic Component
- 1
- Package
- SOT-323
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0000003344
- Power Dissipation(Pd)
- 150mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 50V
- Capacitor(Ciss)
- 26pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：RU1J002YNTCL N通道MOSFET
一、产品背景
RU1J002YNTCL是一款由知名电子元器件制造商ROHM（罗姆）生产的N通道MOSFET。这款场效应管在现代电子产品中扮演着重要角色，广泛应用于开关电源、电机驱动、信号开关以及LED驱动等领域。凭借其优越的性能和稳定性，该MOSFET是一种理想的选择，满足各种低功耗和高效率的电路设计需求。
二、产品技术规格
安装类型：表面贴装型
- 该型号采用表面贴装(SMD)封装设计，便于自动化生产和空间节省，适合高密度电路板的应用。
导通电阻：最大值2.2Ω（@200mA，4.5V）
- 在固定的电流和驱动电压下，RU1J002YNTCL表现出较低的导通电阻，能够有效减少功耗和提高电源效率。
驱动电压：0.9V（最大 Rds On），4.5V（最小 Rds On）
- 该MOSFET能够在低电压下实现有效的导通，这使得RU1J002YNTCL在各种电源电压条件下均能保持良好的性能。
连续漏极电流：200mA（Ta=25°C）
- 适用于负载电流要求较低的应用场合，满足多种电路设计需求。
漏源电压（Vdss）：50V
- 可支持的最大漏源电压为50V，适用于多种中低压应用。
功率耗散：最大值150mW（Ta=25°C）
- 具备较低的功耗特性，使得该元件在较高频率和功率处理的情况下依然能够保持稳定。
输入电容（Ciss）：最大值26pF（@10V）
- 低输入电容使得驱动电路的要求降低，系统响应速度更快。
工作温度：150°C（TJ）
- 工作温度高达150℃，增强了其在高温环境下的适用性，确保其在严苛环境中的可靠性。
最大Vgs：±8V
- 该MOSFET的栅源电压最大可达±8V，适应性强，可在较宽的栅电压范围内工作。
阈值电压（Vgs(th)）：最大值800mV（@1mA）
- 进一步降低开关门槛，为低电压控制提供了更多的设计可能性。
三、应用场景
RU1J002YNTCL MOSFET适用于以下应用场景：
- 电源管理：在DC-DC转换器或线性稳压器中的开关控制，提升电路的整体效率。
- LED驱动：广泛用于LED背光模块和指示灯控制，以确保合理的电流传输和亮度控制。
- 前端信号开关：用于各种信号调理电路，不影响信号完整性。
- 电机驱动：符合小型直流电机驱动电路的需求，控制电机的启停及转速。
四、总结
RU1J002YNTCL作为一款高性能N通道MOSFET，不仅在导通电阻、功率耗散及工作温度方面表现优异，还能够适应多样化的应用需求。随着电子科技的快速发展，该MOSFET的出色性能必将为电子产品的设计和创新提供强有力的支持。罗姆的这款产品无疑是设计师和工程师在选择高效、稳定的电子元器件时的理想选择。
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