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ROHM 2SCR572D3TL1
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ROHM 2SCR572D3TL1
- Type
- ROHM
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ROHM
- Electronic Component
- 2SCR572D3TL1
- Electronic Component
- 1
- Package
- TO-252-2
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.38g
- Electronic Component
- 1
- Electronic Component
- BM0000537138
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 300MHz
- Power Dissipation(Pd)
- 10W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SCR572D3TL1 产品概述
基本信息
2SCR572D3TL1 是一款由罗姆（ROHM）公司设计的高性能 NPN 晶体管，封装形式为 TO-252，为表面贴装型（SMD）设计。该晶体管的额定功率可达 10W，适用于多种高效能电子应用。
电气特性
集电极电流 (Ic)
该器件的最大集电极电流为 5A，使其能够在重载条件下稳定工作，适合在功率放大和开关电路中使用。集射极击穿电压 (Vce)
其最大集射极击穿电压为 30V，这为设备提供了良好的电源兼容性，使其适合在需要较高电压的应用环境中工作。饱和压降 (Vce(sat))
在 100mA 和 2A 的不同负载条件下，Vce 的饱和压降最大值为 400mV。这一特性意味着该晶体管在进行开关操作时，能够以较低的能耗转换状态，提高了整体能效。截止电流 (ICBO)
截止状态时的集电极电流最大值为 1µA，这表明该器件在非导通状态时具有较高的绝缘性，适合低功耗场景。DC 电流增益 (hFE)
在 500mA 的集电极电流下，电流增益的最小值为 200。这使得该晶体管在放大电路中表现出色，能够有效地提高信号的强度。
频率性能
2SCR572D3TL1 的频率跃迁特性达到了 300MHz，意味着其在高频应用中也能稳定工作。广泛应用于开关电源、射频放大器和高频信号处理等领域。
工作温度
该晶体管的工作温度范围可以达到150°C，极大地提高了其在高温环境下的适用性，使其能够在严苛条件下正常工作。
应用领域
由于其优秀的电气性能，2SCR572D3TL1 适用于多种应用场景：
- 开关电源：能够承受较大的电流和电压变化，适合用作开关元件。
- 功率放大器：其高电流增益和低饱和压降特性使其成为音频和RF放大器的理想选择。
- 直流电动机驱动：高功率输出和良好的热管理能力适合电动机控制电路。
- 照明控制：在光源驱动电路中，作为开关元件能够实现高效控制。
封装信息
2SCR572D3TL1 使用 TO-252 封装形式，具有良好的散热性能，安装简便，适合大规模生产和工艺自动化。其紧凑设计为空间有限的电子电路提供了更多灵活性。
结论
综上所述，2SCR572D3TL1 是一款在性能、可靠性和适用性上均表现卓越的 NPN 晶体管。无论是对于需要高功率、高电流、低饱和压降的应用，还是对频率性能和环境耐受性有特别要求的设计，2SCR572D3TL1 均能满足其需求。选择此款晶体管，将为您的设计带来显著的性能提升和可靠性保证，是现代电子设备和系统中不可或缺的重要元器件。
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