WMSIC Electronic Components

ROHM 2SA1774EBTLR

Model2SA1774EBTLR
PackageEMT3F(SOT-416FL)
BrandROHM
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ROHM 2SA1774EBTLR
Type
ROHM
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ROHM
Electronic Component
2SA1774EBTLR
Electronic Component
1
Package
EMT3F(SOT-416FL)
Electronic Component
Transistor(BJT)
Electronic Component
0g
Electronic Component
Rohm Semiconductor
Electronic Component
1
Electronic Component
BM0058399311
Type
Surface Mount
Operating Temperature
150°C(TJ)
Electronic Component
Electronic Component
Package / Housing
SC-89,SOT-490
Transistor Type
PNP
Frequency
140MHz

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SA1774EBTLR 产品概述

一、简介与定位

2SA1774EBTLR 是 ROHM(罗姆)生产的一款小信号 PNP 双极型晶体管,封装为小型表面贴装封装 EMT3F(同 SC-89 / SOT-416FL / SOT-490 系列),以卷带(TR)形式供货。该器件额定集电极击穿电压 50V、最大集电极电流 150mA、最大耗散功率 150mW,适用于低功耗小信号放大与开关场合。请注意:器件状态标注为“不适用于新设计”,在新产品开发时应考虑长期可获得性与替代器件。

二、主要电气参数(典型/最大值)

  • 极性:PNP,双极型晶体管(BJT)。
  • 最大集射极电压 VCEO:50V。
  • 最大集电极电流 Ic:150mA。
  • 最大耗散功率 Ptot:150mW(芯片结温 TJ 允许上限 150°C)。
  • 集电极截止电流 ICBO(最大):100nA(表征反向泄漏)。
  • 直流电流增益 hFE(最小值):120 @ Ic = 1mA,VCE = 6V(低电流区具有较高增益)。
  • 跃迁频率 fT:约 140MHz(适用于高频率小信号放大)。
  • 饱和压降 VCE(sat)(典型/最大):大约 500mV,在 Ib = 5mA、Ic = 50mA 条件下(请以厂方完整数据手册为准)。

以上参数为器件关键特性,具体在电路设计中应参照 ROHM 的官方数据手册获得完整曲线与典型值。

三、封装与热管理

2SA1774EBTLR 采用 EMT3F(SOT-416FL / SC-89)超小型表面贴装封装,适合高密度 PCB 布局。由于封装体积小,热阻较大,最大耗散功率 150mW 在实际电路中需要按环境温度降额使用:

  • 在布局时建议增大集电极/引脚下方的铜箔面积以改善散热。
  • 对于连续工作在较高电流/电压条件下,应降低 Ic 或采用外部散热措施以避免结温过高。
  • 最大结温 TJ = 150°C,设计时应保留安全裕度并遵循 PCB 温度提升控制。

四、典型应用场景

  • 低功耗小信号放大(射极跟随、共射极放大器)。
  • 高频小信号放大与缓冲(受益于较高的 fT)。
  • 通用开关器件(小电流驱动、逻辑电平转换)。
  • 音频前级与补偿电路中用作小信号放大或偏置元件(在满足功率与线性度要求下)。

由于为 PNP 器件,常与 NPN 器件配合用于对称推挽、对称放大或电平转换。

五、典型电路说明(使用建议)

  • 共射极配置:适用于电压放大,参考偏置电阻选择以保持 Ic 在安全区间,并考虑 hFE 在不同电流下变化。
  • 射极跟随(发射极输出):可用作低输出阻抗缓冲,注意 VCE(sat) 与对地电压裕度。
  • 驱动与饱和工作:若用于开关,应保证基极驱动电流 Ib 足以在所需 Ic 下将晶体管压入饱和区(参考 VCE(sat) 500mV @ Ib=5mA、Ic=50mA)。

六、选型与替代建议

  • 由于产品标注“不适用于新设计”,在长期量产或新项目中建议评估替代型号或向 ROHM 咨询可替代的在产型号。
  • 选型时关注关键指标:VCEO、Ic、hFE、fT 与封装热能力,以确保替代器件在电气与热性能上匹配或更优。

七、注意事项与可靠性

  • 存储与回流焊接按 ROHM 推荐的温度曲线和湿度敏感等级(MSL)处理,避免焊接损伤与潮湿吸收导致的封装裂纹(详细请参见厂方焊接指南)。
  • 在设计时考虑器件的漏电流随温度上升而增加,尤其是在高温工作环境下应留足裕度。
  • 对于高速应用,注意寄生电容与 PCB 布局对频率响应的影响,尽量缩短信号路径并使用良好接地。

如需更详细的特性曲线、引脚定义、典型应用电路与可靠性数据,请参考 ROHM 官方数据手册或联系供应商获得最新技术支持。

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