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ROHM EMG2T2R
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ROHM EMG2T2R
- Type
- ROHM
- Minimum package
- 8000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ROHM
- Electronic Component
- EMG2T2R
- Electronic Component
- 1
- Package
- EMT-5
- Electronic Component
- 2 NPN
- Electronic Component
- Digital Transistor
- Electronic Component
- 0.018g
- Electronic Component
- 1
- Electronic Component
- BM0107671576
- Resistor
- 1
- Resistor
- 47kΩ
- Transistor Type
- NPN
- Frequency(f T)
- 250MHz
- Power Dissipation(Pd)
- 150mW
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
EMG2T2R 产品概述
产品概述
EMG2T2R 是一款由知名品牌 ROHM（罗姆）生产的数字集成电路，采用6-SMD（5引线）扁引线的表面贴装型封装。其内置有两个 NPN 预偏压式晶体管，旨在满足各种数字应用的需求。该器件在设计上充分考虑了电流增益、功率消耗以及频率响应等多个方面，能够为用户在广泛的应用场景下提供可靠的性能。
关键特性
晶体管类型: EMG2T2R 包含两个 NPN 预偏压晶体管，使其在速度和功耗方面表现卓越，适用于逻辑控制、开关电路等数字电路应用。
电流参数: 该器件具有最大集电极电流（Ic）为 100mA，并且支持高达 500nA 的集电极截止电流，这意味着它可以在低功耗和高效率的条件下运行。
击穿电压: EMG2T2R的集射极击穿电压（Vce）最大值为 50V，能够很好地适应高电压环境，对电路的安全性提供了一定的保障。
电流增益特性: 在不同的操作条件下，EMG2T2R 提供的直流电流增益（hFE）最小值可达 68，采用 5mA 的集电极电流和 5V 的供电电压，这使得其在信号放大或驱动负载方面表现出色。
饱和压降: 在转态时，Vce 饱和压降最大为 300mV，这一低饱和压降能够有效地减少功耗，因此在需要高效率和低热量的应用中表现良好。
频率响应: EMG2T2R 的跃迁频率高达 250MHz，适合用于要求高速开关的电路，例如 RF（射频）和高速数字信号处理。
功耗: 该器件的最大功率消耗限制在 150mW，确保其在高密度电路设计中进行高效运行，避免过热和性能下降。
应用场景
EMG2T2R 的设计使其能够广泛应用于多种电子设备和电路中，包括但不限于：
- 数字电路: 用于逻辑开关、信号放大和数据处理等。
- 通信系统: 在高频信号处理和射频应用中，EMG2T2R 的高频性能使其成为理想选择。
- 消费电子: 在各种消费电子设备中如电视、音响等的开关和放大电路中均可见其身影。
- 控制系统: 用于自动化控制、电机驱动或其他需要高效开关的应用场景。
封装与安装
EMG2T2R 采用 EMT5 封装，表面贴装型设计使其在自动化生产线上的安装变得高效且准确。该封装体积小巧，适合紧凑型电子产品设计，同时也提高了元器件的电气性能。
结论
综上所述，EMG2T2R 是罗姆公司推出的一款高性能数字晶体管，凭借其出色的电性能、低功耗和广泛的应用适用性，充分展示了现代电子元器件的技术能力。无论是在高频通信、数字电路还是其他工业应用中，EMG2T2R 都能够满足用户的多元化需求并为其提供稳定的电力解决方案。
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