WMSIC Electronic Components

ROHM RV2C014BCT2CL

ModelRV2C014BCT2CL
PackageDFN1006-3
BrandROHM
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ROHM RV2C014BCT2CL
Type
ROHM
Unit
Electronic Component
Minimum package
8000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ROHM
Electronic Component
RV2C014BCT2CL
Electronic Component
1
Package
DFN1006-3
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.011g
Electronic Component
1
Electronic Component
BM0000002841
Power Dissipation(Pd)
600mW
Electronic Component
Electronic Component
Electronic Component
8000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

RV2C014BCT2CL 产品概述

一、产品基本信息

RV2C014BCT2CL 是一款由 ROHM(罗姆)公司生产的 P 型沟道 MOSFET(场效应晶体管),采用紧凑的 DFN1006-3 封装。这款 MOSFET 以其优秀的电气性能和热管理能力,适用于多种电子设备的开关和放大功能。其基本参数包括最大漏源电压(Vdss)为 20V,最大连续漏电流(Id)为 700mA,以及最大功耗为 400mW(在环境温度 Ta 下)。RV2C014BCT2CL 是现代电子设计中重要的元器件,适用于需要小尺寸和高效率的应用场合。

二、重要规格参数

  1. 安装类型: RV2C014BCT2CL 为表面贴装型,方便在自动化生产线上快速集成,缩短产品制造周期。
  2. 最大导通电阻: 在 1.4A 和 4.5V 的工作条件下,导通电阻(Rds On)最大值为 300 毫欧,保证了其在 switching 应用中提供低功耗的性能。这对于电源管理和电动机驱动等场合尤为重要。
  3. Vgs 驱动电压: 该器件支持的最大 Rds On 驱动电压为 4.5V,最小为 1.8V,体现了其低门电压操作的特性,能有效降低控制电路的电源要求。
  4. 输入电容 (Ciss): 在不同的 Vds 电压下,最大输入电容为 100pF(在 10V 时),这表明该 MOSFET 具有良好的频率响应,适合高频率开关和信号处理应用。
  5. 阈值电压 (Vgs(th)): 在 Id 为 100µA 时,最大阈值电压为 1V,这使得其在低电压工作时能够实现快速开启,适用于需要低触发电压的电路设计。

三、工作环境和应用

RV2C014BCT2CL 的工作温度范围达到 150°C,是目前高温环境下操作的理想选择。其广泛应用于以下领域:

  • 电源管理: 该 MOSFET 可以用于 DC-DC 转换器的开关电路,有效提升转换效率和可靠性。
  • LED 驱动: 由于其良好的导通性能及热特性,适合用于低功率LED灯的驱动电路。
  • 电动机控制: 在各种场合中,例如小型电动汽车、玩具、家用电器等,这款 MOSFET 可用作电机的驱动元件,提供稳定的电流控制。
  • 信号开关: 在数据采集和处理系统中,RV2C014BCT2CL 可作为开关元件实现对异步信号的控制。

四、设计优势

RV2C014BCT2CL 作为一款高效能的 MOSFET,其最大功耗为 400mW,这为设计者提供了一定的设计裕度。此外,DFN1006-3 封装的设计可优化PCB空间使用,适合紧凑型设计需求。随着电子设备向小型化、高效能化发展,RV2C014BCT2CL 的应用前景非常广泛。

五、总结

总之,RV2C014BCT2CL 是一款高性能、低功耗的 P 型沟道 MOSFET,适合包括电源管理、LED 驱动和电动机控制等多种应用。其先进的技术参数和优异的工作特性,使其在行业竞争中脱颖而出,对于追求高效、可靠和紧凑设计的电子应用场合,RV2C014BCT2CL 是一个理想的选择。

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