WMSIC Electronic Components

ROHM RV2C001ZPT2L

ROHM RV2C001ZPT2L
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Product image

ModelRV2C001ZPT2L
PackageX1-DFN1006-3
BrandROHM
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

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Technical data

Product details

20 specifications

Core information

Product name
ROHM RV2C001ZPT2L
Type
ROHM
Unit
Electronic Component
Minimum package
8000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ROHM
Electronic Component
RV2C001ZPT2L
Electronic Component
1
Package
X1-DFN1006-3
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.009g
Electronic Component
1
Electronic Component
BM0265388048
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
100mW
Electronic Component
Electronic Component
Electronic Component
8000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

RV2C001ZPT2L 产品概述

产品简介

RV2C001ZPT2L 是一款由罗姆半导体（Rohm Semiconductor）生产的P沟道金属氧化物场效应晶体管（MOSFET）。其设计目的是为了满足高效能与高温工作的要求，尤其适用于便携式电子设备、消费类电子产品以及电源管理应用。这款场效应管以其紧凑的DFN1006-3封装（VML1006），结合卓越的电气特性，成为了现代电路设计中的理想选择。

主要参数

  • 制造商: Rohm Semiconductor
  • 封装规格: DFN1006-3 (VML1006)
  • 封装类型: 表面贴装型
  • 最大侧漏电流（Id）: 100mA
  • 最大漏源电压（Vdss）: 20V
  • 最大功率耗散: 100mW
  • 最高工作温度: 150°C
  • 最大Rds(on): 3.8Ω，@ 100mA，4.5V
  • Vgs(th)（门源阈值电压）: 最大1V @ 100µA
  • 输入电容（Ciss）: 15pF @ 10V
  • 最大Vgs: ±10V

应用领域

RV2C001ZPT2L 的设计适合于多个应用场合，包括：

  • 电源管理: 其表现出的高效能特性使其成为电源开关和电源转换器的理想选择。
  • 便携式电子设备: 由于其低功耗和高工作温度的能力，适合集成于智能手机、平板电脑、可穿戴设备等产品中。
  • 汽车电子: 高达150°C的工作温度提供了在激烈使用条件下的稳定性，适合汽车电子的要求。
  • 工业应用: 在需要长时间运行和高可靠性的环境中，这款MOSFET能够满足苛刻的工作条件。

电气特性分析

RV2C001ZPT2L 的 P沟道配置，使其在高侧开关应用中表现优越。其低的导通电阻（Rds(on)）在最大电流下能达到3.8Ω，这样的设计确保了在工作时的能量损耗最小，进而提供高效的功率管理。此外，1V的阈值电压意味着在驱动时可以有效地降低开关损耗，进一步提升产品的效率。

封装与安装

该产品采用了DFN1006-3封装，这种小型化设计便于在空间受限的PCB中使用，同时其表面贴装的形式也大幅提升了生产效率。这种封装的低电感特性也增强了其在高频应用中的表现。

散热与功率管理

RV2C001ZPT2L 的最大功率耗散为100mW，以及相对较大的工作温度范围（最高可达150°C），使其在散热和过载保护方面有着良好的表现。这在电源管理和阶段性的开关操作中尤为重要，能够确保晶体管在高负载情况下的安全运行。

结论

总体来说，RV2C001ZPT2L 是一款高性能的P沟道MOSFET，结合了低导通电阻、宽工作温度范围和出色的功率管理能力，使其成为电路设计师和工程师在选择高效电子组件时的优先选项。无论是在高效能的电源解决方案还是紧凑型消费类电子产品中，此器件的使用都能带来明显的性能提升。随着市场对功率转换和管理需求的不断增长，RV2C001ZPT2L 将在未来的应用中发挥越来越重要的作用。

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