WMSIC Electronic Components

ROHM SST2222AHZGT116

ModelSST2222AHZGT116
PackageSOT-23
BrandROHM
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ROHM SST2222AHZGT116
Type
ROHM
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ROHM
Electronic Component
SST2222AHZGT116
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.029g
Electronic Component
1
Electronic Component
BM0228210713
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
300MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SST2222AHZGT116 产品概述

一、产品简介

SST2222AHZGT116 是一款 ROHM(罗姆)品牌的 NPN 双极晶体管,采用 SOT-23 小型封装,面向便携与空间受限的电路设计。器件在低压下能提供高达 600mA 的集电极电流能力,适合做高频开关与小功率功率放大应用。

二、主要电气参数

  • 晶体管类型:NPN
  • 最大集电极电流(Ic):600 mA
  • 集-射极击穿电压(Vceo):40 V
  • 最大耗散功率(Pd):200 mW(封装限制)
  • 直流电流增益(hFE):35 @ 100 µA, 10 V
  • 特征频率(fT):300 MHz
  • 集电极截止电流(Icbo):100 nA
  • 集-射极饱和电压(VCE(sat)):约 300 mV(饱和时)
  • 射-基极击穿电压(Vebo):6 V
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SOT-23

三、关键特性与优势

  • 高频特性良好:fT 约 300 MHz,适合用于高频小信号放大与快速开关。
  • 低漏电流:Icbo 仅 100 nA,可在微弱偏置下保持低静态漏流。
  • 低饱和压降:VCE(sat) 约 300 mV,有利于在开关应用中降低功耗。
  • 宽工作温度与稳健的击穿电压,适应工业级环境要求。
  • SOT-23 小封装便于表面贴装,适配高密度 PCB 设计。

四、典型应用场景

  • 低压高速开关电路,如驱动继电器、LED、光耦等。
  • 小功率功率放大器与射频前端的增益级(受限于功耗与热设计)。
  • 电源管理及逻辑电平转换。
  • 便携设备、消费类电子及工业控制中通用开关/驱动元件。

五、使用建议与注意事项

  • 热设计:器件 Pd=200 mW,SOT-23 封装散热有限。持续在 Ic=600 mA 工况下工作时,需保证 VCE(sat) 接近 0.3 V 或采取良好 PCB 散热(加大铜箔面积、热过孔)以避免过热。若负载导致较高 VCE,应降低平均电流或采用并联/外部散热更好的器件。
  • 驱动与基极限流:为保证开关饱和,通常采用强迫 β(Ic/Ib)约 10~20;在 Ic=600 mA 时相应基极电流较大,应通过前级驱动器提供或选择更合适的功率晶体管。
  • 安全余量:设计时建议留出电压与功率裕度,避免长时间接近最大额定值以延长可靠性。
  • 静电与防潮:SOT-23 器件需按常规静电防护和潮湿敏感等级处理与回流焊工艺控制。

六、封装与采购信息

  • 封装:SOT-23,适合自动贴装生产线。
  • 品牌:ROHM(罗姆)。
  • 适配替代方案时,注意对比 Vceo、Ic、Pd 与 VCE(sat) 等关键参数以确保替换兼容。

总结:SST2222AHZGT116 在小尺寸封装下提供较高的集电极电流能力与良好的高频性能,适合多种开关与低功耗放大应用。但因封装功耗限制,需重视热管理与基极驱动设计以确保长期可靠运行。

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