WMSIC Electronic Components

ROHM 2SK3019TL

Model2SK3019TL
PackageSC-75(SOT-523)
BrandROHM
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ROHM 2SK3019TL
Type
ROHM
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ROHM
Electronic Component
2SK3019TL
Electronic Component
1
Package
SC-75(SOT-523)
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.022g
Electronic Component
1
Electronic Component
BM0000279746
Operating Temperature
40℃~+150℃
Power Dissipation(Pd)
150mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:2SK3019TL MOSFET

1. 概述

2SK3019TL是一款高性能的N沟道金属氧化物场效应晶体管(MOSFET),专为低功率应用设计,具有出色的导通特性和热稳定性。该器件由知名半导体供应商ROHM(罗姆)制造,适用于各种电子设备的开关和放大功能,特别是在便携设备和消费电子产品中扮演着重要角色。

2. 主要参数

  • 漏源电压(Vdss):该器件的漏源最大工作电压为30V,适合用于中等电压范围的电路设计。
  • 连续漏极电流(Id):在25°C环境温度下,2SK3019TL能够承受高达100mA的连续漏极电流,满足一般电子应用的需求。
  • 栅源极阈值电压(Vgs(th)):该MOSFET的栅源阈值电压为1.5V(测量于100µA),这意味着在此电压值上,器件开始导通。低阈值特性使其在低电压控制信号下也能可靠工作。
  • 漏源导通电阻(Rds(on)):在4V栅源电压和10mA电流条件下,导通电阻为8Ω,表明该器件在开启状态下具有良好的导电性,从而降低功耗和发热。
  • 最大功率耗散:在环境温度为25°C时,该器件的最大功率耗散为150mW,确保其在正常工作条件下的安全性和可靠性。
  • 工作温度:该器件支持的工作温度范围可达150°C(结温),适合于高温环境下的应用。

3. 封装与安装

2SK3019TL采用表面贴装型封装(EMT3),形状为SC-75(SOT-416),提供了小型化和高密度布局的优势。表面贴装技术(SMT)使得该器件在现代电子产品设计中占据先机,能够有效地节省电路板空间并提高组装效率。

4. 应用场景

2SK3019TL MOSFET广泛应用于:

  • 便携式设备:由于其低功耗特性,适用于各种电池供电的装置,如手机、平板电脑、便携式游戏机等。
  • LED驱动:可用于LED灯的开关控制,实现高效且稳定的亮度调节。
  • 电源管理:适用于DC-DC变换器和电源转换电路中,提升系统整体能效。
  • 家电控制电路:作为开关元件,用于控制电机和其他负载。

5. 优势与特点

  • 低导通电阻和高电流承载能力:提供出色的开关性能,适合高频率和快速响应的应用场景。
  • 小型化封装:优化了电路设计空间,配合表面贴装技术,更易于集成和自动化生产。
  • 优秀的热管理特性:能够在较高的工作温度中稳定运行,保证长期可靠性。
  • 良好的线性度和增益特性:适用于对线性放大要求较高的应用。

6. 结论

综上所述,2SK3019TL是一款具有竞争力的N沟道MOSFET,凭借其低功耗、高效能和优良的热性能,广泛适用于现代电子产品的多种应用场景。无论是在便携设备、LED驱动还是电源管理中,都能提供可靠的性能和灵活的设计选项,是电子工程师实现设计目的的理想选择。

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