WMSIC Electronic Components

ROHM RQ5H020SPTL

ModelRQ5H020SPTL
PackageTSMT3
BrandROHM
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 22+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ROHM RQ5H020SPTL
Type
ROHM
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ROHM
Electronic Component
RQ5H020SPTL
Electronic Component
1
Package
TSMT3
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0000002207
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
45V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

RQ5H020SPTL 产品概述

产品名称: RQ5H020SPTL
类型: P 沟道 MOSFET
制造商: ROHM(罗姆)
封装类型: TSMT3 (SC-96)
工作温度: 最高150°C
功率耗散: 最大540mW

一、引言

RQ5H020SPTL 是一款高性能的 P 沟道金属氧化物半导体场效应管(MOSFET),专为高效能电子电路而设计,广泛应用于电源转换、功率开关以及其他需要低导通损耗的场合。该器件具有较高的耐压特性及较低的导通电阻,使其在众多应用场景中展现出色的性能。

二、主要参数

  1. 漏源电压(Vdss): RQ5H020SPTL 的漏源电压为 45V,适用于需要较高耐压的电路设计,能够有效满足各类电源与电机控制系统的需求。

  2. 最大漏极电流(Id): 在25°C环境下,该器件的连续漏极电流最高可达 2A,充分满足加载要求,同时保持安全的运行状态。

  3. 导通电阻(Rds On): 在 Vgs 为 10V、Id 为 2A 的条件下,RQ5H020SPTL 的最大导通电阻仅为190毫欧,保证了优异的导电性和低能量损耗,有助于提高整体电路效率。

  4. 栅极阈值电压: Vgs(th) 的最大值为 3V,这意味着该 MOSFET 在较低的栅极电压下也能实现导通,适用于低电压驱动的应用。

  5. 栅极电荷(Qg): 最大栅极电荷为 9.5nC,当 Vgs 为 10V 时,意味着该器件在驱动上也具有较低的功耗和快速的开关特性。

  6. 输入电容(Ciss): 在 10V 时,输入电容最大值为 500pF,这影响了开关速度和复位时间,使其适用于高频开关应用。

  7. 栅极电压(Vgs): 栅极的最大电压为 ±20V,增加了与各种驱动电路兼容的灵活性。

三、应用场景

RQ5H020SPTL 由于其出色的电气特性,适用于如下应用场景:

  • 开关电源: 该 MOSFET 可用于 DC-DC 转换器中,作为主开关元件,提供更高的效率和稳定性。
  • 电机驱动: 在电机控制电路中,RQ5H020SPTL 可做为高侧或低侧开关,确保快速的开关性能及低功耗。
  • 功率管理: 用于各种功率管理模块,提升系统整体效率并减少热量产生。
  • 自动化与控制系统: 在传感器和执行器的控制中,实现低延时和高效能的开关。

四、总结

RQ5H020SPTL 是 ROHM 制造的一款优秀的 P 沟道 MOSFET,其高达 45V 的漏源电压、2A 的最大漏电流、低导通电阻及小型化的 TSMT3 封装,使其在许多现代电子应用中具备很高的适应性与可靠性。无论是在开关电源、电机控制还是功率管理等领域,RQ5H020SPTL 都提供了极大的设计灵活性,是高效能电子产品设计的理想选择。选择 RQ5H020SPTL,即选择了性能和信赖的结合,帮助设计师实现更高效、更节能的产品方案。

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