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ROHM RD3G07BATTL1
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ROHM RD3G07BATTL1
- Type
- ROHM
- Unit
- Electronic Component
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ROHM
- Electronic Component
- RD3G07BATTL1
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.41g
- Electronic Component
- 1
- Electronic Component
- BM0213793440
- Power Dissipation(Pd)
- 101W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
RD3G07BATTL1 产品概述
RD3G07BATTL1是一款由Rohm Semiconductor制造的高性能P沟道MOSFET（场效应管），封装形式为TO-252。这款元器件专为高功率和高效率应用而设计，适用于各种电子电路中的开关和放大器等功能。其强大的性能指标和可靠的工作特性使其在先进的电源管理、电动机驱动、以及各种电气设备中格外受欢迎。
主要特性
高电压和电流容量： RD3G07BATTL1的漏源电压（Vdss）高达40V，同时具有持续漏极电流（Id）达到70A的能力。这使其非常适合在高电压和高电流环境下使用，例如在电源转换和电动机控制等应用中，能够承受瞬时的负载波动。
低导通电阻： 在典型的工作条件下（Vgs = 10V和Id = 70A），该器件的最大导通电阻（Rds(on)）为7.1毫欧。这一低电阻特性显著降低了功率损耗，提高了效率，尤其在高频率开关电源或电动机驱动中表现尤为优秀。
栅极电压和阈值的灵活性： RD3G07BATTL1支持的驱动电压为4.5V至10V，能够在多个Vgs条件下工作。同时，该器件的栅源阈值电压（Vgs(th)）最大值为2.5V（在1mA条件下），可大大简化控制电路设计。此外，栅极电荷（Qg）的最大值为105nC（在10V Vgs下），使其对于快速开关控制要求的应用尤为适用。
高功率密度和散热能力： RD3G07BATTL1的功率耗散能力高达101W，配合高达150°C的工作温度范围（TJ），适合高温和高功率密度的工作环境。对于需要长时间稳定运行的工业设备或高效能的电源系统而言，其热管理设计是非常重要的考虑因素。
表面贴装设计： 采用TO-252封装，RD3G07BATTL1非常适合在现代电子设备的高密度电路板上应用。这种表面贴装型设计便于自动化生产，提高了制造效率，也减少了因插装式设计导致的机械应力。
应用领域
由于其优异的电气性能，RD3G07BATTL1广泛应用于以下领域：
- 开关电源：能够有效控制电流的新型高效开关电源设计。
- 电动机驱动：适合用于直流电动机、步进电动机及无刷电动机的驱动电路。
- 电池管理系统：在电池充电与放电过程中，确保高效的能量转换和安全操作。
- 消费电子产品：在各类电子产品中提供电源控制与电流管理。
- 能源管理系统：用于实现对能量的高效管理和转换。
总结
RD3G07BATTL1 MOSFET以其卓越的性能指标、可靠性和高效能特性，成为现代电子产品设计中不可或缺的元器件之一。对于设计师而言，它不仅能够优化电路的功率损耗，还能提高整体系统的运行效率。未来，随着电力电子技术的不断发展，RD3G07BATTL1必将在更广泛的应用场景中展现其优越性能，为各种高效能电子产品的设计提供更有力的支持。
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