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ROHM RV1C002UNT2CL
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ROHM RV1C002UNT2CL
- Type
- ROHM
- Minimum package
- 8000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ROHM
- Electronic Component
- RV1C002UNT2CL
- Electronic Component
- 1
- Package
- DFN-3(0.8x0.6)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.01g
- Electronic Component
- 1
- Electronic Component
- BM0000003557
- Power Dissipation(Pd)
- 100mW
- Electronic Component
- Electronic Component
- Electronic Component
- 8000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 12pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
RV1C002UNT2CL 产品概述
一、基本信息
RV1C002UNT2CL 是一款由日本 ROHM（罗姆）公司生产的高性能 N 通道 MOSFET，采用表面贴装型 VML0806 封装。该器件专为中低功率应用而设计，适合在要求高效率和低功耗的电路中使用。其主要特点包括较低的导通电阻、适应较大温度范围的能力，以及优良的开关性能，使其在现代电子设备中得到广泛应用。
二、技术参数
- 安装类型：表面贴装型（SMD），适合自动化焊接及在空间受限的PCB设计中使用。
- FET 类型：N 通道，它在电子开关和放大应用中具有更低的导通损耗。
- 漏源电压（Vdss）：最大可承受电压为 20V，适合多种电源管理和电机驱动应用。
- 连续漏极电流（Id）：在 25°C 条件下可提供高达 150mA 的连续电流，显示出其在中小负载下的优越性能。
- 功率耗散（最大值）：100mW，适合在小型设备中的应用，避免发热过高导致器件失效。
- 导通电阻（Rds On）：在不同 Id 和 Vgs 下，最大值为 2 欧姆（@150mA，4.5V），有效降低了在开关过程中因电阻损耗引起的热量。
- 驱动电压（Vgs）：限制在 ±8V，提供稳定的阈值电压，确保在多种工作条件下的可靠性。
- 工作温度：最高工作温度可达到 150°C，适用于严苛环境下的应用。
- 输入电容（Ciss）：在 Vds 为 10V 时最大约为 12pF，有助于提高开关速度及降低驱动功耗。
- 阈值电压（Vgs(th)）：在 Id 为 100µA 时，最大值为 1V，确保在低电压下即可导通，从而拓宽了其应用范围。
三、应用领域
由于其出色的电气性能，RV1C002UNT2CL 广泛应用于各类电子产品中，如：
- 电源管理：用于开关电源、功率路径选择等电源管理电路。
- 电机驱动：在小功率电机的驱动回路中，实现低耗能的控制。
- 照明控制：在LED驱动电路中，提供有效的开关控制。
- 消费电子：手机、平板等便携设备中，用于实现高效的电源分配和功耗管理。
四、总结
RV1C002UNT2CL 是一款具有竞争力的 N 通道 MOSFET，凭借其优异的电气性能和广泛的应用能力，适合各种低功率电子设备。其小巧的表面贴装封装设计、良好的散热特性、高耐受性，使其成为现代电子设计中非常理想的选择。无论是在高效能电源管理，还是在细致的电子控制系统中，RV1C002UNT2CL 都能提供稳定可靠的性能，帮助工程师们实现产品在性能和可靠性方面的最佳平衡。
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