WMSIC Electronic Components

ROHM RV3C002UNT2CL

ModelRV3C002UNT2CL
PackageVML0604
BrandROHM
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ROHM RV3C002UNT2CL
Type
ROHM
Minimum package
8000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ROHM
Electronic Component
RV3C002UNT2CL
Electronic Component
1
Package
VML0604
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.002g
Electronic Component
1
Electronic Component
BM0259575269
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
100mW
Electronic Component
Electronic Component
Electronic Component
8000
Voltage(Vdss)
20V
Capacitor(Ciss)
12pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

RV3C002UNT2CL 产品概述

一、产品简介

RV3C002UNT2CL 是 ROHM(罗姆)推出的一款小功率 N 沟道场效应管(MOSFET),封装为 VML0604(XFDFN-3)。该器件针对低电压、低电流场合优化,具有低输入电容和较小的导通电阻特性,适用于便携设备与信号级电源切换等应用。

二、主要电气参数

  • 漏-源耐压 (Vdss):20 V
  • 连续漏极电流 (Id):150 mA
  • 导通电阻 (RDS(on)):2 Ω @ Vgs = 4.5 V, Id = 150 mA
  • 功率耗散 (Pd):100 mW
  • 门极阈值电压 (Vgs(th)):约 840 mV(典型)
  • 输入电容 (Ciss):12 pF
  • 反向传输电容 (Crss):3 pF @ 10 V
  • 工作温度范围:-55 ℃ ~ +150 ℃

三、封装与热特性

VML0604(XFDFN-3)为超小型表面贴装封装,适合空间受限的应用。由于封装体积小,热阻较大,器件额定耗散功率仅 100 mW,设计时需重视功耗与散热:

  • 在持续工作条件下,应保证通过的电流与 RDS(on) 乘方计算的功耗低于额定值并留有裕量;
  • 建议在 PCB 布局中增加散热铜箔/通孔,并保证焊盘良好热接触。

四、典型应用场景

  • 便携式设备的小电流电源切换与负载开关
  • I/O 线的电平隔离或保护开关
  • 传感器供电开关与节能控制
  • 作为信号级开关或高速脉冲驱动元件(因 Ciss 和 Crss 较小,开关速度良好)

五、设计与使用建议

  • 门级驱动:器件为低阈值特性,Vgs(th) ≈ 0.84 V,4.5 V 驱动时 RDS(on) 指标给出参考。若用于更低驱动电压(如 1.8 V/3.3 V),需根据实际测试确认导通损耗与温升。
  • 开关速度:Ciss = 12 pF,Crss = 3 pF,适合快速切换;若系统中有铲板效应或干扰,建议在门极串联小阻(10–100 Ω)以抑制振铃与 EMI。
  • 功耗估算:在满载 150 mA 时,Pd = I^2·RDS(on) ≈ 45 mW,低于器件 100 mW 额定,但需考虑环境温度与 PCB 散热能力的降额。
  • 版图建议:门极、漏极与源极走线尽量短且宽,减少寄生电感;在漏源回路放置去耦电容,靠近器件焊盘布局。

六、注意事项与可靠性

  • 器件为 N 沟道 MOSFET,存在体二极管,布线时注意反向电流路径与二极管导通情形。
  • 在高温环境或长时间连续工作时,需要按照温升曲线进行降额设计,避免长期在额定 Pd 附近运行。
  • 进行板级验证时,应测量在不同 Vgs、不同负载下的温升与 RDS(on) 变化,以确定在目标系统中的实际表现。

总结:RV3C002UNT2CL 适合在空间受限、对开关速度和寄生电容要求较高但功耗较小的场合作为低电压、低电流的通断或保护开关使用。合理的驱动与 PCB 散热设计能发挥其最佳性能。

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