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ROHM UMD5NTR
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ROHM UMD5NTR
- Type
- ROHM
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ROHM
- Electronic Component
- UMD5NTR
- Electronic Component
- 1
- Package
- SC-88
- Electronic Component
- 1 NPN, 1 PNP
- Electronic Component
- Digital Transistor
- Electronic Component
- 0.026g
- Electronic Component
- 1
- Electronic Component
- BM0000035431
- Operating Temperature
- 55℃~+150℃
- Resistor
- 1
- Resistor
- 47kΩ
- Transistor Type
- NPN+PNP
- Frequency(f T)
- 250MHz
- Power Dissipation(Pd)
- 150mW
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
UMD5NTR 产品概述
介绍
UMD5NTR 是来自 ROHM（罗姆）公司的高级数字晶体管解决方案，专为需要高效能和高可靠性的应用而设计。该产品融合了一对NPN和PNP双晶体管，提供灵活的电路设计选项，同时实现低功耗和高线性度特性。该产品主要侧重于数字电路和信号放大应用，满足现代电子设备对性能和空间效率的严苛要求。
关键特性
双晶体管设计: UMD5NTR 集成了一个 NPN 和一个 PNP 晶体管，这种设计使得其在电流驱动和信号切换场景中非常灵活。预偏压的配置简化了外部电路的设计，降低了对外部偏置电压的需求。
电流和电压规格: 该晶体管的集电极电流（Ic）最大值为 100mA，集射极击穿电压最大值为 50V，适应广泛的功率要求，能够满足多种不同电路设计的需求。
高增益特性: 在典型工作条件下，当 Ic 为 5mA，Vce 为 5V 时，其直流电流增益（hFE）的最小值可达到 68，而在 Ic 为 10mA 的情况下，hFE 则为最小 30。这一特性使得 UMD5NTR 在信号放大方面表现优异。
低饱和压降: 该产品的最大 Vce 饱和压降为 300mV，确保在低功耗状态下依然能够有效驱动负载，减少了功耗和发热。
微小的漏电流: 在集电极截止情况下，其最大漏电流为 500nA，极大提高了系统的能效，为便携式设备提供了更长的电池寿命。
高频应用能力: UMD5NTR 的频率跃迁达到 250MHz，能够满足高频信号处理的需求，尤其适合高速数字电路和无线通信应用。
小型封装: 采用表面贴装型(UMT6封装)，尺寸紧凑，对PCB设计的友好程度高，非常适合空间受限的应用场景，支持自动化生产流程。
多种电阻选择: UMD5NTR的基极和发射极电阻配置，分别为47kΩ与4.7kΩ，47kΩ与10kΩ，为设计师提供了灵活的电路设计选项。
应用场景
UMD5NTR 适用于各种电子设备，包括但是不限于：
- 消费电子：如智能手机、平板电脑、便携式音响等。
- 自动化控制：电机驱动、开关电源、传感器接口等。
- 通信设备：无线发射和接收模块，数据传输系统。
- 工业设备：传感器信号放大、开关控制等。
结论
UMD5NTR 凭借其高性能、高可靠性和灵活性，成为设计师在众多电子产品设计中不可或缺的选择。其微型的封装和出色的电流增益特性使得它在竞争中脱颖而出，是现代电子设计领域中理想的高效器件。随着科技的快速发展，UMD5NTR 将在推动电子产品更加高效、紧凑、智能化方面发挥重要作用。
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