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ROHM EMD4T2R
Configuration
1 options
Configuration
22+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ROHM EMD4T2R
- Type
- ROHM
- Minimum package
- 8000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ROHM
- Electronic Component
- EMD4T2R
- Electronic Component
- 1
- Package
- SOT-563(SOT-666)
- Electronic Component
- 1 NPN, 1 PNP
- Electronic Component
- Digital Transistor
- Electronic Component
- 0.015g
- Electronic Component
- 1
- Electronic Component
- BM0058399309
- Operating Temperature
- 55℃~+150℃
- Resistor
- 1
- Resistor
- 47kΩ
- Transistor Type
- NPN+PNP
- Frequency(f T)
- 250MHz
- Power Dissipation(Pd)
- 150mW
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：EMD4T2R
1. 产品介绍
EMD4T2R是一款高性能数字晶体管，设计为一个NPN和一个PNP的预偏置双极性晶体管。它在各类电子应用中提供优异的电流放大性能，适合用于信号放大、开关控制与逻辑电路设计。EMD4T2R的最大集电极电流（Ic）为100mA，具有集射极击穿电压（Vce最大值）达到50V的能力，确保其在多种电压和电流条件下的可靠性和稳定性。
2. 关键参数
- 晶体管类型：EMD4T2R包含一个NPN和一个PNP晶体管，预偏置特性使其在某些应用中能更快速地进入导通状态。
- 电流 - 集电极（Ic）：最大值为100mA，适合高电流需求的应用。
- 电压 - 集射极击穿（Vce）：最大值达到50V，能够承受较高的瞬时电压，提升电路的稳定性。
- DC电流增益（hFE）：在Ic为5mA，Vce为5V时，最小增益为68，表明该晶体管能在适度的条件下提供良好的放大能力。
- 饱和压降：在不同的Ib和Ic条件下，最大饱和压降为300mV（500µA，10mA和250µA，5mA），这意味着在开关操作时能有效减少功率损耗。
- 集电极截止电流：最大为500nA，电路的漏电流极低，有助于提高效率。
- 频率 - 跃迁：高达250MHz，适用于高速开关及高频信号处理。
- 功率：最大功率能力为150mW，适用于中等功率应用环境。
- 安装类型：表面贴装型，使得安装更为便捷，适合现代PCB设计。
- 封装：EMD4T2R采用SOT-563和SOT-666封装，这些小型化设计极大地节省了PCB空间，并适应高密度布局的需求。
3. 应用领域
EMD4T2R适用于各种电子应用，包括但不限于：
- 开关电路：由于其快速响应时间和小饱和压降，EMD4T2R非常适合用于开关电路，如LED驱动、继电器驱动等。
- 信号放大：在音频和射频放大器设计中，它能够有效地对微弱信号进行放大。
- 逻辑电路：由于其高增益特性，适合用于数字逻辑电路当中，为数字信号提供良好的驱动能力。
- 电源管理：可用于DC-DC转换器和开关电源设计，提升效率并降低能量损失。
4. 性能优势
EMD4T2R凭借其卓越的电气性能，能够在多种应用场景下提供稳定、可靠的工作表现。其设计着重于降低功耗与提高转速，确保在高频操作条件下能稳定工作。此外，表面贴装封装的特性，让它在更为紧凑、复杂的电路设计中也能发挥作用。
5. 结论
作为ROHM（罗姆）公司生产的一款先进数字晶体管，EMD4T2R在功率、增益和频率等多方面展现出卓越的性能。这款产品凭借其多样的应用场景和优越的参数，成为设计师和工程师在电子元器件选择时的重要候选。无论是在消费电子、工业设备还是通信产品中，EMD4T2R都能够提供高效、可靠的解决方案，助力各种电子设备的创新发展。
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