WMSIC Electronic Components

ROHM QH8MA4TCR

ModelQH8MA4TCR
PackageTSMT-8
BrandROHM
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ROHM QH8MA4TCR
Type
ROHM
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ROHM
Electronic Component
QH8MA4TCR
Electronic Component
1
Package
TSMT-8
Electronic Component
1 N +1 P
Type
N +P
Electronic Component
MOSFET
Electronic Component
0.048g
Electronic Component
1
Electronic Component
BM0058399313
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.6W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

QH8MA4TCR 产品概述

一、产品介绍

QH8MA4TCR 是一款高性能的 N 沟道和 P 沟道场效应管(MOSFET),适用于多种电子应用。该产品由知名品牌 ROHM(罗姆)制造,采用了先进的材料和制造工艺,确保其在高工作温度下的优异表现。其主要特点包括最大漏源电压为 30V、持续漏极电流高达 9A(N 沟道)和 8A(P 沟道)以及极低的导通电阻和良好的输入电容特性,使其成为了低功耗、高效能电路设计中的理想选择。

二、关键参数

  1. FET 类型: 该产品包含一个 N 沟道和一个 P 沟道场效应管,提供更广阔的适用范围和电路设计灵活性。
  2. 漏源电压 (Vdss): 最大可达 30V,适合处理各种中低电压电路应用。
  3. 连续漏极电流 (Id): N 沟道为 9A,P 沟道为 8A,这使得 QH8MA4TCR 能够满足对电流有较高要求的应用。
  4. 导通电阻 (Rds(on)): 在 10V 的栅极电压下,导通电阻最大值只有 16 毫欧,这意味着在工作时能够有效降低功耗,提高系统效率。
  5. 阈值电压 (Vgs(th)): 1mA 时的最大值为 2.5V,适合在较低驱动电压下实现开关控制。
  6. 栅极电荷 (Qg): 最大值为 15.5nC @ 10V,这有助于降低驱动电路的损耗,提升开关速度。
  7. 输入电容 (Ciss): 在 15V 时的输入电容最大值为 640pF,较低的输入电容有助于提高开关速度和频率响应。
  8. 功率最大值: 该元件的最大功率为 1.5W,非常适合中等功率要求的应用场合。
  9. 工作温度: 其工作温度可高达 150°C(TJ),在高温环境下依然能够稳定运行。
  10. 封装: 产品采用表面贴装类型的 TSMT8 封装,适合现代电子产品的紧凑设计要求。

三、应用场景

QH8MA4TCR 的灵活性和高性能特性使其能够广泛应用于以下领域:

  1. 电源管理: 在开关电源、DC-DC 转换器等电源管理电路中,QH8MA4TCR 的高效特性能够显著提高整机的工作效率。
  2. 马达驱动: 在电动机控制回路中,该产品由于其较高的漏极电流和迅速的开关特性,可实现高效的马达驱动。
  3. 类比信号开关: 适合各种模拟信号的开关操作,可用在音频设备等消费者电子产品中。
  4. 功率放大器: 在射频和音频功率放大器中的应用,能够有效提升系统的线性度和功率表现。
  5. 驱动电路: 适用于各种固态继电器的驱动电路,支持快速开关和高频操作。

四、总结

QH8MA4TCR 作为一款高效的 MOSFET,其出色的电气性能和适应性极大地满足了现代电子设备对元器件的要求。无论是低功耗设计还是高温环境运行,QH8MA4TCR 都能提供可靠的解决方案。凭借其出色的导通电阻和较低的栅极驱动需求,该产品在电源管理、马达驱动以及类比信号处理等领域具有显著的优势,是设计工程师在选择场效应管时的优选产品。

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