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ROHM QH8JC5TCR
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ROHM QH8JC5TCR
- Type
- ROHM
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ROHM
- Electronic Component
- QH8JC5TCR
- Electronic Component
- 1
- Package
- TSMT-8
- Electronic Component
- 2 P
- Electronic Component
- MOSFET
- Electronic Component
- 1.233g
- Electronic Component
- 1
- Electronic Component
- BM0252997500
- Power Dissipation(Pd)
- 1.1W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 850pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
QH8JC5TCR 产品概述
一、产品简介
QH8JC5TCR 是 ROHM（罗姆）推出的一款双路 P 沟道小信号 MOSFET，面向高电压小功率开关与保护应用。器件额定耐压为 60V（P 沟道常表示为 -60V），封装为 TSMT-8，集成两个 Pch 单元，便于高边开关和双路负载控制。
二、主要参数
- 数量：2 个 P 沟道
- 漏源电压 Vdss：60 V（Pch）
- 连续漏极电流 Id：3.5 A
- 导通电阻 RDS(on)：91 mΩ @ Vgs = 10 V, Id = 3.5 A
- 功耗 Pd：1.1 W
- 阈值电压 Vgs(th)：2.5 V（典型）
- 栅极电荷 Qg：17.3 nC @ 10 V
- 输入电容 Ciss：850 pF @ 30 V
- 封装：TSMT-8，品牌：ROHM
三、关键特性与优势
- 低电阻且适合 10 V 驱动：在 Vgs = 10 V 下 RDS(on) 为 91 mΩ，适合需要低导通损耗的高边开关场景。
- 双通道集成：节省 PCB 面积并简化高边/双路负载控制设计。
- 中等栅极电荷：Qg = 17.3 nC 表明栅极驱动能量要求适中，需考虑驱动器能力与开关损耗。
四、典型应用
- 电池供电系统的高边开关与电源路径控制
- 电源管理、背光或摄像头开关等小信号功率控制
- 逆极性/过流保护电路、负载切换模块
五、设计与布局建议
- 驱动电压：推荐 Vgs = -10 V（Pch）以达到标称 RDS(on)，注意负向栅极驱动相对于源极的幅值。
- 热管理：器件 Pd = 1.1 W，TSMT-8 热阻较大，应通过加厚 PCB 铜箔、散热铜箔/过孔来扩展散热面积，避免长时间大电流工作导致过热。
- 布局：将电源回流、热散路径和栅极驱动路径分开，栅极走线尽量短且并联阻容以抑制振铃。
- 开关损耗：Qg 与 Ciss 指示在较高开关频率下栅极驱动损耗不可忽视，需估算驱动能量并选择合适驱动器或限流网络。
六、使用注意事项与选型建议
- 注意器件为 P 沟道，Vgs 的极性与 N 沟道不同，设计时确认驱动逻辑和电位范围。
- 阈值为 2.5 V，低电压驱动下可能无法完全导通，应保证足够的负向门源电压以降低导通损耗。
- 若需更大功率或更低 RDS(on)，可考虑并联器件，但要做好热均衡与共享电阻设计。
- 在选型时结合开关频率、导通/开关损耗、散热能力和系统电压等级综合评估。
如需基于 QH8JC5TCR 的典型电路参考、热仿真建议或与其他型号对比，我可以继续提供更详细的设计支持。
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