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ROHM PTZTE257.5B
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ROHM PTZTE257.5B
- Type
- ROHM
- Unit
- Electronic Component
- Minimum package
- 1500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ROHM
- Electronic Component
- PTZTE257.5B
- Electronic Component
- 1
- Package
- SMA(DO-214AC)
- Electronic Component
- Zener Diode
- Electronic Component
- 0.11g
- Electronic Component
- 1
- (Zzt)
- 4Ω
- Electronic Component
- BM0000001125
- Diode
- 1
- Current(Ir)
- 20uA
- Power Dissipation(Pd)
- 1W
- Electronic Component
- 7.5V~8.4V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：PTZTE257.5B 稳压二极管
1. 引言
PTZTE257.5B 是一款高性能的稳压二极管，由知名半导体制造商 ROHM（罗姆）推出，采用 SMA(DO-214AC) 封装，设计上旨在为各类电路提供稳定的电压支持。其标称齐纳电压为7.9V，适用于要求稳压功能的应用场景，广泛应用于消费电子、工业设备和通信系统中。
2. 产品特点
安装类型：PTZTE257.5B 采用表面贴装型（SMD）设计，易于在现代电子设备中实现自动化生产，适合高密度电路板的配置。
齐纳电压：其标称齐纳电压为7.9V，使其在不同的应用中如电源管理、信号保护等方面能够保持稳定的输出电压，提供可靠的电压稳定性。
阻抗：该稳压二极管的最大阻抗为4 Ohms，较低的阻抗可减少在信号传输过程中的波形失真，提升整体电路性能。
功率额定值：PTZTE257.5B 的最大功率为1W，能够支持较强的电流需求，使其适合用于负载较大、需求较高稳定性的电路设计中。
反向泄漏电流：在4V的情况下，其反向泄漏电流仅为20µA，显示出良好的阻断特性，能够有效减小能量损耗，提升能效。
电压容差：此产品具备 ±6% 的电压容差，能够提供对电压变化的适应性，确保电路在各种工作环境下的稳定性。
3. 应用场景
PTZTE257.5B 稳压二极管的设计使其能够满足多种应用需求，具体应用包括但不限于：
电源管理电路：在开关电源和线性电源中，PTZTE257.5B 可用来实现电压的稳定和保护，确保下游电路的正常运行。
信号保护：用于保护敏感元件（如微控制器、传感器等）免受电压突变和过电压的影响，防止元件损坏。
消费类电子产品：在手机、平板电脑和其他便携式设备中，可用于对电源电压进行调节，为设备的稳定运行提供支持。
工业设备：在各种工业自动化设备和传感器中，PTZTE257.5B 可以用于电源和信号的保护，确保设备的可靠性和安全性。
通信设备：在网络和通信设备中，保障信号的完整性和稳定性，支持无干扰的通信过程。
4. 结论
PTZTE257.5B 作为一款高性能稳压二极管，凭借其优异的电气特性和宽广的应用范围，成为了多种电子设计中的优选组件。其易于集成的表面贴装型设计也适应了现代电子制造业不断追求的高效生产要求。无论是在消费电子、工业控制，还是通信系统中，PTZTE257.5B 的应用都能有效提升产品的稳定性和可靠性，为电子设备的正常运行提供持久的支持。选择 PTZTE257.5B，您将在稳压电路设计中获得更高效和更可靠的解决方案。
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