WMSIC Electronic Components

ROHM RJK005N03T146

ModelRJK005N03T146
PackageTO-236-3(SOT-23-3)
BrandROHM
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ROHM RJK005N03T146
Type
ROHM
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ROHM
Electronic Component
RJK005N03T146
Electronic Component
1
Package
TO-236-3(SOT-23-3)
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM69413691
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

RJK005N03T146 产品概述

一、基本信息

RJK005N03T146 是一款高性能的 N 沟道金属氧化物场效应管(MOSFET),采用表面贴装型(SMD)封装,型号为 TO-236-3(即 SOT-23-3)。该产品由知名的半导体制造商 ROHM(罗姆)提供,旨在为各种电子应用提供高效的开关和放大解决方案。

二、主要参数

  • 导通电阻 (Rds(on)): 在 4.5V 时最大导通电阻为 580 毫欧,能够有效降低开关损耗,提升整体效率。
  • 连续漏极电流 (Id): 该器件在工作温度 25°C 下,持续漏极电流可达 500mA,适合中等负载的电源管理应用。
  • 驱动电压 (Vgs): 该器件支持的驱动电压范围为 2.5V 至 4.5V,能够适应各种逻辑电平,便于与微控制器和数字电路直接连接。
  • 漏源电压 (Vdss): 最大漏源电压为 30V,适合低至中电压应用。
  • 输入电容 (Ciss): 在 10V 时,输入电容最大值为 60pF,这使得该 MOSFET 在高频应用中表现良好。
  • 功率耗散: 最大功率耗散为 200mW,适合在小型电子设备中使用。

三、应用领域

RJK005N03T146 在各种电子产品中有广泛的应用,主要包括但不限于以下几个领域:

  • 电源管理: 该 MOSFET 可用作DC-DC转换器中的开关,提高转换效率。
  • 负载开关: 可以用于驱动低功耗负载,在便携式电子产品、计算机和通信设备中,能够有效延长电池寿命。
  • 音频放大器:由于其高线性度和低噪声特性,适合用于音频信号的开关控制和放大应用。
  • LED驱动: 能够有效控制LED的开关,适用于照明和显示领域,同时能提高能效。

四、工作环境

RJK005N03T146 的工作温度范围可达到 150°C,这使得其在极端环境下仍能可靠工作。该特性使其非常适合于工业环境、汽车电子至高功率应用等,能够承受较高的环境温度并保持稳定的性能。

五、封装与安装

采用表面贴装型封装对于提升集成度、减小PCB面积具有重要意义。TO-236-3 封装设计使得 RJK005N03T146 在电路板上更易于焊接且占用空间小。同时,这种封装形式使得器件在拆解和更换时更加便捷,增强了用户的使用体验。

六、总结

凭借其优异的性能参数和多功能的应用场景,RJK005N03T146 成为了一款引人注目的 N 沟道 MOSFET。无论是在低功耗设备,还是在需要稳定性能的领域,该产品均能提供令人满意的解决方案。作为 ROHM 的一款核心产品,RJK005N03T146 的推出代表了其在创新和技术上的不断追求,必将为广泛的电子应用带来更高的效率和更好的可靠性。

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