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ROHM UMH10NTN
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ROHM UMH10NTN
- Type
- ROHM
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ROHM
- Electronic Component
- UMH10NTN
- Electronic Component
- 1
- Package
- SOT-363
- Electronic Component
- 2 NPN
- Electronic Component
- Digital Transistor
- Electronic Component
- 0.026g
- Electronic Component
- 1
- Electronic Component
- BM69416091
- Operating Temperature
- 55℃~+150℃
- Resistor
- 21
- Resistor
- 2.2kΩ
- Transistor Type
- NPN
- Frequency(f T)
- 250MHz
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
UMH10NTN 产品概述
UMH10NTN是一款由知名电子元器件制造商ROHM（罗姆）生产的数字晶体管，该产品在设计上集成了两个NPN晶体管，采用了预偏置结构，适用于多种电子电路应用。它以其高性能的电气参数、优良的封装形式和适应广泛的应用场景而受到市场的广泛欢迎。
基本特性
UMH10NTN的主要参数如下：
- 晶体管类型：这款产品由两个NPN晶体管组成，能够在各种开关电路和放大电路中发挥重要作用。
- 集电极电流最大值（Ic）：该晶体管的集电极电流最大值为100mA，允许在高电子流动条件下运行而不易损坏，适合于中等功率的应用。
- 集射极击穿电压（Vce(max)）：具有50V的击穿电压，意味着在未熔断的情况下，能承受的最高电压相对较高，适应能力强。
- 基极电阻（R1）和发射极电阻（R2）：基极电阻为2.2千欧，发射极电阻为47千欧，这一电路设计确保了良好的电流控制和稳定性。
电流增益与参数
UMH10NTN的直流电流增益（hFE）在不同的集电极电流（Ic）和电压（Vce）条件下，最小能够达到80 @ 10mA，5V。这表明其在标准条件下的增益非常出色，保证了信号在传输过程中的有效放大。
饱和压降（Vce(sat)）的最大值为300mV @ 250µA，5mA，意味着在充分驱动晶体管的条件下，其能保持低压降，提高能量转换效率。这一参数尤其适合高频和低功耗的应用。
在集电极截止电流（Ic(off)）方面，最大值仅为500nA，显示出其在关闭状态时的低漏电流特性，进一步减少了不必要的功耗。
频率响应与功率
UMH10NTN具有频率跃迁能力高达250MHz，表明其在高频应用中的适用性，如射频（RF）电路和开关电源等。同时，其额定功率最大值为150mW，适合要求中等功率的应用场景。
封装与安装
UMH10NTN使用6-TSSOP封装（SC-88，SOT-363），属于表面贴装型电子元器件。这一封装形式不仅使得安装过程更加简便，还有效节省了电路板的空间，符合现代消费电子产品对高集成度的需求。其小巧的设计适合于移动设备和高密度电路板等多种应用。
应用领域
UMH10NTN广泛应用于消费电子、通信设备、工业控制、汽车电子等多个领域。因其低功耗特性和高频性能，该晶体管在无线设备、开关电源、LED驱动器以及各种信号放大电路中尤为常见。
总结
UMH10NTN是一款高性能的数字晶体管，凭借其出色的电气参数和小巧的封装设计，成为各类电子设备中不可或缺的重要元器件。无论是在提高电子电路的效率、降低能耗，还是在实现更高频率的信号传输方面，该产品的应用潜力十分巨大，是电子工程师在设计电路时的优选元件。
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