WMSIC Electronic Components

RENESAS AT45DB321E-SHF-T AT45DB321E

ModelAT45DB321E-SHF-T
PackageSOIC-8-208mil
BrandRENESAS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
RENESAS AT45DB321E-SHF-T
Type
RENESAS
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
RENESAS
Electronic Component
AT45DB321E-SHF-T
Electronic Component
1
Package
SOIC-8-208mil
Electronic Component
NOR FLASH
Electronic Component
0.334g
Electronic Component
1
Features
positions
Electronic Component
BM0230811933
Electronic Component
32Mbit
Operating Voltage
2.3V~3.6V
Current
25uA
Interface Type
SPI
Electronic Component
100000
Clock Frequency(fc)
85MHz

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AT45DB321E-SHF-T 产品概述

一、产品简介

AT45DB321E-SHF-T 是一款高性能的 SPI 闪存存储器,容量 32Mbit(4MB),由 RENESAS(瑞萨)提供。器件支持高达 85MHz 的 SPI 时钟频率,工作电压范围宽(2.3V~3.6V),兼顾低功耗与高速传输,适合对容量、速度和可靠性均有要求的嵌入式系统存储应用。

二、主要参数

  • 存储容量:32Mbit(4MBytes)
  • 接口类型:SPI(标准四线 SPI,总线信号典型为 CS、SCLK、MOSI、MISO)
  • 最大时钟频率 (fc):85MHz
  • 工作电压:2.3V ~ 3.6V
  • 待机电流:25μA(典型,待机模式下)
  • 页写入时间 Tpp:4ms(页写入典型时间)
  • 擦写寿命:100,000 次(典型)
  • 数据保留(TDR):20 年
  • 封装:SOIC-8-208mil
  • 品牌:RENESAS(瑞萨)

三、性能与可靠性

该器件在高速 SPI 总线上能提供稳定的数据读写性能,85MHz 的最高时钟支持在带宽受限的系统中实现更短的传输延迟。器件的擦写寿命高达 100k 次,适合需要频繁更新但又有可靠性要求的应用场景;典型数据保持时间为 20 年,可用于长期配置和固件存储。待机模式下 25μA 的低电流有利于电池供电或低功耗系统的能耗控制。

四、接口与封装

AT45DB321E-SHF-T 采用标准 8 引脚 SOIC-8(208 mil)封装,易于 PCB 布局和批量生产。器件通过标准 SPI 接口进行访问,主控 MCU 通过片选(CS)和时钟(SCLK)控制读写时序,数据通过 MOSI/MISO 线传输,兼容主流 SPI 驱动逻辑。封装紧凑,便于在空间受限的应用中集成。

五、典型应用

  • 嵌入式系统固件与启动代码存储
  • 配置参数与校准数据保存
  • 数据记录与日志缓冲
  • 工业控制、消费电子、物联网节点等需要非易失性存储的场景

六、设计注意事项

  • 电源旁路:建议在 VCC 引脚附近放置 0.1μF 陶瓷去耦电容,并与地良好连接,以抑制电源噪声和瞬态电流。
  • 时序与片选:在多从设备的 SPI 总线上确保 CS 信号互斥,避免总线冲突;写操作期间需按器件规定监测状态位或等待页写完成(Tpp 约 4ms)。
  • 耐久与擦写次数:针对有限的擦写寿命(100k 次),在频繁写入场景下应采用写均衡、日志轮替或外部缓存机制以延长使用寿命。
  • 工作电压兼容性:若与低电压 MCU 连接,确认电平兼容或采用必要的电平移位方案(器件 VCC 范围 2.3V–3.6V)。

AT45DB321E-SHF-T 将高速 SPI 性能与长期数据保持、较高擦写耐久度相结合,是对容量、速度和可靠性有明确需求的设计的稳妥选择。若需更详细的时序图、指令集或电气特性表,请参考制造商详细数据手册。

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