WMSIC Electronic Components

RENESAS AT45DB161E-SSHD-T AT45DB161E

ModelAT45DB161E-SSHD-T
PackageSOIC-8
BrandRENESAS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
RENESAS AT45DB161E-SSHD-T
Type
RENESAS
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
RENESAS
Electronic Component
AT45DB161E-SSHD-T
Electronic Component
1
Package
SOIC-8
Electronic Component
NOR FLASH
Electronic Component
0.169g
Electronic Component
1
Features
positions
Electronic Component
BM0230826943
Electronic Component
16Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
2.3V~3.6V
Current
25uA
Interface Type
SPI
Electronic Component
100000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AT45DB161E-SSHD-T 串行闪存存储器产品概述

AT45DB161E-SSHD-T是瑞萨电子推出的16Mbit串行SPI闪存,针对嵌入式系统对高容量、高速读写、低功耗及工业级可靠性的需求优化设计,采用紧凑SOIC-8封装,适配多类应用场景。

一、产品核心定位与优势

该产品属于串行闪存范畴,通过SPI接口实现数据交互,相比并行闪存具有引脚少、布线简单、PCB空间占用小的特点;同时结合85MHz高速时钟、低功耗待机及宽温适配,可满足从电池供电终端到 harsh工业环境的多样化需求。

二、关键性能参数详解

1. 存储与读写能力

  • 容量:16Mbit(等效2MB),采用串行页编程架构(典型页大小256字节),支持页写入、块/整片擦除,适合小批量数据存储及固件升级;
  • 速度:最高85MHz SPI时钟,支持高速数据传输,满足嵌入式系统实时读写需求。

2. 电源适配性

  • 电压范围:2.3V~3.6V,兼容主流MCU的3.3V供电及低功耗2.5V系统,无需额外电平转换;
  • 待机功耗:典型值25μA,显著延长电池供电设备(如物联网传感器)的续航时间。

三、封装与接口设计

  • 封装:SOIC-8(小外形封装),尺寸紧凑(引脚间距1.27mm),适合小型化产品(如智能模组、便携式设备);
  • 接口:标准SPI协议(含MOSI、MISO、SCK、CS引脚),兼容瑞萨、STM32等主流MCU,简化系统集成。

四、可靠性与耐用性

  • 擦写寿命:100,000次(10万次),支持频繁固件升级及数据修改(如工业PLC程序存储);
  • 数据保留:20年(TDR时间),长期存储校准参数、日志等关键数据不丢失;
  • 温区范围:-40℃~+85℃,覆盖工业级环境,稳定工作于户外传感器、车间控制节点。

五、典型应用场景

  1. 工业控制:PLC模块、远程IO单元的程序与日志存储;
  2. 物联网终端:智能电表、环境监测站的配置参数存储;
  3. 消费电子:机顶盒、路由器的固件升级与缓存;
  4. 便携式设备:手持测试仪、医疗监护仪的低功耗数据存储。

六、产品总结

AT45DB161E-SSHD-T通过高容量、高速SPI、低功耗、工业级可靠性的组合,成为嵌入式存储优选;紧凑封装与宽电压适配降低了设计成本,可满足从入门到中高端嵌入式产品的存储需求。

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