WMSIC Electronic Components

RENESAS AT45DB041E-SHN-T AT45DB041E

ModelAT45DB041E-SHN-T
PackageSOIC-8-208mil
BrandRENESAS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
RENESAS AT45DB041E-SHN-T
Type
RENESAS
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
RENESAS
Electronic Component
AT45DB041E-SHN-T
Electronic Component
1
Package
SOIC-8-208mil
Electronic Component
NOR FLASH
Electronic Component
0.334g
Electronic Component
1
Features
positions
Electronic Component
BM0257584395
Electronic Component
4Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
1.65V~3.6V
Current
25uA
Interface Type
SPI
Electronic Component
100000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AT45DB041E-SHN-T 产品概述

一、概览

AT45DB041E-SHN-T 为 RENESAS 提供的一款串行 NOR Flash(DataFlash)存储器,容量 4Mbit,组织为 2048 页 × 264Byte,采用标准 SOIC-8-208mil 封装。器件通过 SPI 接口工作,最高时钟频率 fc 可达 85MHz,适用于需要小型、低功耗且可靠非易失性存储的嵌入式系统。

二、关键电气与性能参数

  • 存储容量:4 Mbit(2048 × 264 Byte/page)
  • 接口类型:SPI,支持高速串行访问,适配常见微控制器外设
  • 时钟频率:最高 85 MHz,支持快速读写操作
  • 工作电压:1.65 V ~ 3.6 V,适用于 1.8V 和 3.3V 系统
  • 待机电流:典型 25 µA,适合低功耗待机场景
  • 页写入时间(Tpp):典型 3 ms / page
  • 擦写寿命:100,000 次周期(典型)
  • 数据保持(TDR):20 年
  • 工作温度:-40 ℃ ~ +85 ℃

三、可靠性与寿命

该器件具备高擦写寿命(10^5 次)与长期数据保持能力(20 年),适合长期运行且需频繁更新的配置或日志存储。工作温度范围覆盖工业级要求,满足多数工业与仪表应用的使用场景。

四、封装与布局建议

SOIC-8-208mil 标准封装便于 PCB 摆放与手工焊接。设计时建议在 VCC 近旁放置 0.1µF 去耦电容,并在电源引脚和地之间增加额外的滤波以抑制瞬态噪声。SPI 片选线(CS)建议由主控合理驱动,避免总线上争用。

五、典型应用场景

  • 嵌入式固件存储与引导(Bootloader/Backup)
  • 参数表、配置数据与校准值保存
  • 数据记录与日志(需按页管理写入)
  • 消费类与工业设备中小容量非易失性存储需求

六、设计要点与注意事项

  • 由于页结构为 264 Byte,软件应按页对齐进行编程与擦写,以优化写入效率与延长寿命。
  • 工作电压下限为 1.65V,若系统电压接近下限,需验证信号电平与时序稳定性。
  • 高速 SPI 下注意走线阻抗、终端及时序裕量,保证在 85MHz 工作时数据完整性。
  • 关注写保护与电源上电/断电时机,避免未完成写操作时掉电导致数据损坏。

该产品以其高速 SPI、工业级电压与温度范围、低功耗及高可靠性,适合对中等容量非易失性存储有严格性能与寿命要求的嵌入式系统。

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