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RENESAS AT45DB021E-SSHN-T AT45DB021E
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- RENESAS AT45DB021E-SSHN-T
- Type
- RENESAS
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- RENESAS
- Electronic Component
- AT45DB021E-SSHN-T
- Electronic Component
- 1
- Package
- SOIC-8
- Electronic Component
- NOR FLASH
- Electronic Component
- 0.169g
- Electronic Component
- 1
- Features
- positions
- Electronic Component
- BM0264335263
- Electronic Component
- 2Mbit
- Operating Voltage
- 1.65V~3.6V
- Current
- 25uA
- Interface Type
- SPI
- Electronic Component
- 100000
- Clock Frequency(fc)
- 85MHz
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AT45DB021E-SSHN-T 产品概述
一、产品简介
AT45DB021E-SSHN-T 是一款高可靠性的串行 NOR DataFlash 闪存，存储容量为 2 Mbit（1024 pages × 264 Byte），面向需要非易失性数据存储的嵌入式与工业应用。器件由 RENESAS（瑞萨）提供，采用常用的 SOIC-8 封装，便于在空间受限的 PCB 上进行替换与集成。
二、主要技术参数
- 接口类型：SPI 串行接口，兼容常见 SPI 主控。
- 存储容量：2 Mbit，分为 1024 页，每页 264 字节（包含主区与额外字节）。
- 时钟频率：最高可工作至 85 MHz，适合高吞吐量读写需求。
- 工作电压：1.65 V 至 3.6 V，支持 1.8V 与 3.3V 系统直连，无需额外电平转换（须按系统规范设计）。
- 待机电流：典型 25 µA，适合低功耗与待机场景。
- 页写入时间（Tpp）：典型 3 ms／页。
- 擦写寿命：可达 100,000 次擦写周期。
- 数据保持（TDR）：典型 20 年。
三、功能特性与可靠性
- 多重写保护机制：支持硬件写保护（WP 引脚）、软件写保护以及“绝对写保护”功能，可防止误写与意外擦除，提升数据安全性。
- 上电复位（POR）：内置上电复位确保器件上电后进入已知安全状态，便于系统初始化。
- 高可靠性：较长的数据保持时间与 10^5 次擦写寿命，适合工业级与长期部署的应用场景。
- 低功耗特性与高速访问的平衡，适合需要在功耗受限环境下保持一定吞吐性能的设计。
四、封装与接口注意事项
- 封装：SOIC-8（NSOIC-8），标准引脚布局，方便手工与自动化贴装。
- SPI 时序要求：建议参考器件数据手册针对时钟极性/相位（CPOL/CPHA）与 CS、SCLK 的上升/下降沿时序，以保证高速 85 MHz 下的数据完整性。
- 电源与去耦：在高频与低电压工作下，PCB 布局应靠近 VCC/GND 放置去耦电容，避免供电瞬变影响读写可靠性。
- 写保护使用：硬件 WP 与软件保护可同时使用以实现层级保护策略；在固件设计中应加入对写保护状态的检查与管理。
五、典型应用与选型建议
- 适用于固件/配置存储、数据记录（日志）、引导存储、参数保存以及需要长期保存且偶有更新的数据场景。
- 选型建议：若系统工作电压在 1.8V 或 3.3V 且需兼顾低功耗与中等吞吐，可优先考虑此器件；若频繁大块擦写或极高写入频率场景，应评估擦写均衡策略与备用寿命预算。
- 设计提示：对关键数据请结合磨损平衡（wear leveling）与冗余备份策略，利用写保护功能在软件与硬件层面增强数据完整性。
如需电气特性曲线、引脚排列或具体时序图，建议查阅 AT45DB021E 的完整数据手册以获得详尽规范与典型应用电路。
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