WMSIC Electronic Components

RENESAS ISL55111IRZ-T ISL55111IRZ

ModelISL55111IRZ-T
PackageQFN-16-EP(4x4)
BrandRENESAS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
RENESAS ISL55111IRZ-T
Type
RENESAS
Minimum package
6000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
RENESAS
Electronic Component
ISL55111IRZ-T
Electronic Component
1
Package
QFN-16-EP(4x4)
Electronic Component
Gate Driver IC
Electronic Component
0.001g
Electronic Component
1
Features
Electronic Component
Electronic Component
BM0257491087
Operating Temperature
40℃~+85℃
Operating Voltage
5V~13.2V
Load Type
MOSFET
Current(IOH)
3.5A
Current(IOL)
3.5A
Driver Channel Count
2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ISL55111IRZ-T 产品概述

一、概述

ISL55111IRZ-T 是瑞萨(Renesas)推出的一款高性能半桥 MOSFET 驱动器,内含两个独立驱动通道,专为数字成像及功率控制场景设计。器件在 5V~13.2V 工作电压范围内提供强劲的推拉能力(IOH/IOL 均可达 3.5A),可直接驱动功率 MOSFET 实现快速开关,适用于对开关速度和驱动强度有较高要求的系统。

二、主要参数

  • 驱动通道数:2(半桥)
  • 推/拉电流(IOH/IOL):3.5A(典型/最大能力)
  • 工作电压范围:5V ~ 13.2V
  • 上升时间(tr):1.2 ns
  • 下降时间(tf):1.4 ns
  • 输入低电平阈值(VIL):0V ~ 0.8V
  • 静态电流(Iq):4 mA
  • 工作温度范围:-40℃ ~ +85℃
  • 封装:QFN-16-EP (4x4 mm)
  • 负载类型:功率 MOSFET(半桥拓扑)

三、核心特性

  • 高电流驱动能力:3.5A 推/拉足以驱动大多数功率 MOSFET 的栅极电容,实现低延迟切换。
  • 快速开关响应:tr/tf 分别为 1.2 ns / 1.4 ns,利于降低开关损耗与切换交叉时间。
  • 宽工作电压:支持从 5V 到 13.2V 的栅极驱动电压,兼容多种功率器件与供电方案。
  • 低静态消耗:Iq 仅 4 mA,有助于待机与整体能效控制。
  • 工业级温度范围:-40℃ 至 +85℃,满足多种环境应用需求。
  • 紧凑封装:QFN-16-EP (4x4) 提供良好热路径与 PCB 实装密度。

四、典型应用场景

  • 数字成像系统中的电源开关与快门驱动(例如驱动供电 MOSFET、像元阵列电源切换)。
  • 高速 DC-DC 转换器与功率管理模块的半桥驱动。
  • 电机驱动、驱动桥与负载开关场合。
  • 工业与通信设备中需快速栅极驱动的功率级。

五、布局与热管理建议

  • 使用裸露焊盘(EP)以提升散热性能,确保大电流开关时热阻最小化。
  • 栅极与驱动输出走线尽可能短且阻抗匹配,降低寄生电感,提高开关稳定性。
  • 在驱动 VCC 与地之间放置靠近器件的去耦电容(低 ESR 扁平电容),抑制瞬态电流冲击。
  • 关注开关瞬态,必要时在栅极处加入适当的阻尼或电阻/电容网络以防振铃。

六、封装与订购信息

  • 器件型号:ISL55111IRZ-T
  • 制造商:Renesas(瑞萨)
  • 封装:QFN-16-EP (4x4 mm)
    此产品适合在对速度、驱动电流和可靠性有较高要求的数字成像与功率控制系统中替代或升级传统栅极驱动方案。若需电气特性曲线、典型应用电路或 PCB 参考布局图,建议查阅官方数据手册以获取完整参数与设计指南。

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