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RENESAS 2SK2225-80-E#T2 2SK2225
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- RENESAS 2SK2225-80-E#T2
- Type
- RENESAS
- Unit
- Electronic Component
- Minimum package
- 1000 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- RENESAS
- Electronic Component
- 2SK2225-80-E#T2
- Electronic Component
- 1
- Package
- TO-3P
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 8.233g
- Electronic Component
- 1
- Electronic Component
- BM0257222496
- Power Dissipation(Pd)
- 50W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Voltage(Vdss)
- 1.5kV
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SK2225-80-E#T2 产品概述
一、产品概述
2SK2225-80-E#T2 是瑞萨（RENESAS）推出的一款高压 N 沟道功率 MOSFET，面向需要耐高压、脉冲或中低电流功率开关的场合。器件以 TO-3P 大功率封装提供，适合在有可靠散热措施的工业电源和高压电子设备中使用。
二、主要电气参数
- 类型：N 沟道 MOSFET
- 漏源耐压 Vdss：1.5 kV
- 连续漏极电流 Id：2 A
- 导通电阻 RDS(on)：9 Ω（Vgs = 15 V）
- 耗散功率 Pd：50 W
- 输入电容 Ciss：990 pF
- 反向传输电容 Crss：60 pF
- 输出电容 Coss：125 pF
- 封装：TO-3P
- 数量：1 个
三、性能特点与意义
- 高耐压（1.5 kV）：适合高压开关场合，如高压电源、脉冲发生器和中小功率变换器的高压级。
- 中等电流能力（2 A）与较高 RDS(on)：9 Ω 的导通电阻表明器件更适合脉冲或开关型工作而非大电流的低压直通应用；在导通损耗较大时需要注意热设计。
- 封装与功耗：TO-3P 封装配合 50 W 的额定耗散功率，在良好散热条件下可稳定工作。
- 电容特性：Ciss ≈ 990 pF，表明门极驱动需提供一定能量；Crss（60 pF）决定了米勒效应对开关过渡的影响，需在门极驱动和栅电阻设计上加以考虑。
四、典型应用场景
- 高压开关电源（如高压初级级或匝间开关）
- 脉冲供电与激励电路（脉冲宽度调制或高压脉冲输出）
- 高频高压变换器与充电电路
- 工业激光/放电电源、测试与测量设备中的高压开关单元
五、封装与散热建议
- 推荐使用合适的散热片并保证 TO-3P 与散热片的良好热接触，必要时使用导热胶或导热垫。
- 在 PCB 布局上应留出足够的铜箔面积作散热，并尽量缩短高电流回路的走线长度。
- 在频繁开关或高占空比场合，应考虑器件结温和环境温度的降额使用，避免长期在极限 Pd 条件下工作。
六、使用注意事项
- 门极驱动：为达到标称 RDS(on) 需 Vgs 接近 15 V，驱动电路应能提供相应电压与瞬时电荷。
- 开关保护：建议在高压开关点采用限流、TVS 或缓冲电路以防瞬态过压和雷击脉冲。
- ESD 与可靠性：MOSFET 对静电较敏感，装配与测试时应采取防静电措施。
- 额定与降额：在高温或受限散热条件下按厂家数据手册进行功率与电流降额，确保在安全工作区（SOA）内运行。
总结：2SK2225-80-E#T2 以其 1.5 kV 的高耐压和 TO-3P 的良好散热能力，适合用于高压开关与脉冲应用。由于其较高的导通电阻，更适合作为高压侧的开关器件而非低压大电流导通元件；在实际设计中应重视门极驱动、散热和过压保护的配套设计，以获得最佳性能与可靠性。
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