WMSIC Electronic Components

RENESAS R5F10BBFLNA#G5 R5F10BBFLNA

ModelR5F10BBFLNA#G5
PackageHVQFN-32(5x5)
BrandRENESAS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
RENESAS R5F10BBFLNA#G5
Type
RENESAS
Minimum package
490 托盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
RENESAS
Electronic Component
R5F10BBFLNA#G5
Electronic Component
1
Package
HVQFN-32(5x5)
Electronic Component
MCU(MCU / MPU / SOC)
Electronic Component
0.786g
CPU
16 Bit
CPU
RL78
I / O
25
RAM
6KB
Electronic Component
1
EEPROM
4KB
Features
(BOR / LVD / LVR / LVI);; positions(POR); Gate positions; Built-in General Purpose; CRC; ECC
Electronic Component
BM0257410105
Operating Temperature
40℃~+105℃

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

R5F10BBFLNA#G5 产品概述

一、产品简介

R5F10BBFLNA#G5 是瑞萨(RENESAS)基于 RL78 内核的一款 16 位微控制器,面向对能耗、成本和可靠性有较高要求的嵌入式控制应用。该器件在紧凑封装和宽工作电压范围内,提供适度的程序存储与数据存储资源,并集成了内置振荡器与多路 I/O,适合小型电机控制、传感器节点、家电与工业控制等场合。

二、主要参数与特性

  • CPU 内核:RL78,16 位架构,优化的指令集用于控制类任务。
  • 最高主频:32 MHz,能在中等性能要求下保持较低功耗。
  • 程序存储:96 KB FLASH,用于存放固件与引导代码。
  • SRAM:6 KB,适合中小规模运行时数据与栈使用,需关注内存分配与优化。
  • EEPROM:4 KB,提供字节级非易失性存储,便于保存配置参数或校准数据。
  • 数字 I/O:25 路,可满足一般外设和控制引脚需求。
  • 振荡器类型:内置振荡器(减少外部元件),如需高精度时钟请参考器件手册关于外部时钟/晶振支持的说明。
  • 工作电压:2.7 V ~ 5.5 V,兼容单节锂电池或常见系统电源轨。
  • 工作温度:-40 ℃ ~ +105 ℃,适应工业级温度要求。
  • 封装:HVQFN-32(5 × 5 mm),适合对体积要求较高的应用。
  • 品牌:RENESAS(瑞萨)

三、功能优势与应用价值

  • 低功耗与嵌入式控制适配:RL78 内核在低功耗模式下表现优异,适合电池供电或功耗受控的系统。
  • 非易失性配置存储:4 KB EEPROM 便于在现场保存校准值、标识或运行日志而不占用 FLASH 重写周期。
  • 宽电压与宽温度:使本芯片可覆盖更广泛的工业与消费环境,简化系统电源设计与热管理。
  • 紧凑封装:HVQFN-32 提供足够 I/O 的同时节省 PCB 面积,适用于体积受限的产品设计。

四、典型应用场景

  • 小型家电控制(如洗衣机、风扇、微波炉控制模块)
  • 传感器与数据采集节点(带本地存储与简单处理)
  • 工业控制器、仪表与面板控制(需宽温度范围)
  • 电机或伺服控制的低/中档控制单元
  • 便携式仪器与电池供电设备

五、设计注意事项与建议

  • 内存管理:6 KB SRAM 较为有限,在设计时应注意避免大数组、深层递归或过多动态分配,优先采用静态分配与紧凑数据结构。
  • 程序分区与升级:96 KB FLASH 对常见控制固件足够,但若需要 OTA 或多固件分区,请提前规划引导与备份机制。
  • 电源与去耦:建议在供电引脚附近布置适当的去耦电容(例如 0.1 μF 与 1 μF)并使用低噪声稳压器,确保在外设工作时 MCU 时钟稳定。
  • 时钟精度:内置振荡器可简化 BOM,但对精确定时或通信速率敏感的应用,需验证振荡器误差并考虑外部晶体或校准方案。请参照器件数据手册确认外部时钟支持与配置。
  • 引脚布局与散热:HVQFN 封装对 PCB 焊盘与底面散热要求较高,建议根据封装资料设计热焊盘/过孔以改善热传导与可靠焊接。
  • 电磁兼容与信号完整性:在高速切换或外设大电流驱动时,合理地安排地线与电源分割,使用滤波与阻尼元件降低干扰。

六、开发与测试支持

瑞萨为 RL78 系列提供成熟的开发生态,常见支持包括 e2 studio 开发环境、CS+ 工具链以及官方编译器与调试器方案。第三方工具链与开源编译器在一定条件下也可使用。调试与编程通常通过专用调试适配器实现,具体支持详情与引脚分配请参考官方数据手册与应用笔记。

七、总结

R5F10BBFLNA#G5 以 RL78 的低功耗与 16 位控制能力为基础,结合 96 KB FLASH、6 KB SRAM 与 4 KB EEPROM 的存储组合,适合对性能与成本均有平衡需求的嵌入式控制系统。其宽电压、宽温度范围与紧凑 HVQFN 封装,使之在家电、工业控制及便携设备等多种场合具有较强的适配性。建议在设计前详细查阅瑞萨官方数据手册与应用笔记,以确定器件的外设支持、引脚功能与时钟/电源配置,从而获得稳定可靠的系统实现。

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