WMSIC Electronic Components

RENESAS 2SK2225-E 2SK2225

Model2SK2225-E
PackageTO-3PFM
BrandRENESAS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
RENESAS 2SK2225-E
Type
RENESAS
Minimum package
360 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
RENESAS
Electronic Component
2SK2225-E
Electronic Component
1
Package
TO-3PFM
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
6.333g
Electronic Component
1
Electronic Component
BM0257222499
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
50W
Electronic Component
Electronic Component
Electronic Component
360
Voltage(Vdss)
1.5kV

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SK2225-E 产品概述

一、产品简介

2SK2225-E 是瑞萨(RENESAS)推出的一款高电压 N 沟道功率 MOSFET,设计用于高压开关与功率传输场合。器件额定漏源电压 Vdss 为 1.5kV,适合在高压环境下工作,同时提供可靠的热耗散能力与宽工作温度范围(-55℃ 至 +150℃)。

二、主要参数

  • 类型:N 沟道 MOSFET
  • 漏源电压(Vdss):1.5 kV
  • 连续漏极电流(Id):2 A
  • 导通电阻(RDS(on)):12 Ω @ Vgs = 15 V
  • 耗散功率(Pd):50 W
  • 阈值电压(Vgs(th)):4 V @ Id = 1 mA
  • 输入电容(Ciss):66 pF
  • 反向传输电容(Crss):60 pF
  • 输出电容(Coss):125 pF
  • 工作温度:-55 ℃ ~ +150 ℃
  • 封装:TO-3PFM
  • 单位数量:1 个(规格基于单片器件)

三、性能特点

  • 高耐压:1.5 kV 的耐压使其适用于中高压开关电源、脉冲供电和高压转换器。
  • 中低栅电容:Ciss = 66 pF 表明栅极加载相对较小,有利于快速开关和降低驱动能量。
  • 适中导通电阻:RDS(on) 为 12 Ω(15 V 驱动),表明在高压低电流条件下使用更为合适。
  • 宽温区与良好功率耗散能力:50 W Pd 与 -55~+150 ℃ 的工作温度提升了环境适应性,但实际热管理依赖于散热设计与封装安装。

四、典型应用

  • 高压开关电源与升压转换器
  • 中高压脉冲电路(如激光驱动、脉冲供电)
  • 工业高压驱动与保护电路
  • 需要高 Vdss、低电流承载的电源前端或整流开关

五、使用与设计注意事项

  • 栅极驱动:尽管 Vgs(th) ≈ 4 V,但器件在 15 V 驱动时给出 RDS(on) 参数,建议采用足够的栅极驱动电压以降低导通损耗。
  • 热管理:Pd 标称为 50 W,但需结合封装、散热器与实际工作条件计算结到环境的热阻并设计散热系统。
  • 开关保护:高压开关会产生较大 dv/dt 和能量回冲,建议配合合适的栅阻、吸收网络(RCD 或 TVS)以及合理的 PCB 布局以控制过压与振铃。
  • 可靠性与绝缘:在高压电路中注意器件间距离、爬电距离和绝缘处理,避免表面放电与击穿。
  • 参考原厂资料:详细的极限参数、单脉冲能量、SOA 与转换特性请以瑞萨官方数据手册为准。

六、封装与可靠性

TO-3PFM 封装便于机械安装与散热器固定,适合需要良好热接触的高压应用。器件的环境与温度等级使其在工业级和严苛环境中具备较高可靠性,但最终设计应通过热仿真与实际验证确保长期稳定运行。

总之,2SK2225-E 以其 1.5 kV 的高耐压特性、较小的栅电容和工业级温度范围,适合于高压、低至中等电流的功率开关场合;在设计时应重视栅驱动、散热与过压保护以发挥器件最佳性能。

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