WMSIC Electronic Components

RENESAS AT45DB321E-SHF2B-T AT45DB321E

ModelAT45DB321E-SHF2B-T
PackageSOIC-8-208mil
BrandRENESAS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
RENESAS AT45DB321E-SHF2B-T
Type
RENESAS
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
RENESAS
Electronic Component
AT45DB321E-SHF2B-T
Electronic Component
1
Package
SOIC-8-208mil
Electronic Component
NOR FLASH
Electronic Component
0.001g
Electronic Component
1
Features
positions
Electronic Component
BM0264843419
Electronic Component
32Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
2.3V~3.6V
Current
7mA
Interface Type
SPI
Electronic Component
100000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AT45DB321E-SHF2B-T 产品概述

AT45DB321E-SHF2B-T 是瑞萨(RENESAS)系列的一款高性能串行 NOR Flash(DataFlash)存储器,容量 32Mbit,组织为 8192 页 × 512Byte,采用 SPI 接口与 WSOIC-8(SOIC-8-208mil) 封装。器件针对嵌入式系统的代码存储、参数保存、引导程序以及数据记录等应用进行了优化,具有快速编程、可靠耐用与多重写保护等特性,适用于工业级环境下长期稳定运行。

一、主要规格与电气特性

  • 存储容量:32 Mbit(8192 页 × 512 Byte)
  • 接口类型:SPI(最高时钟频率 fc = 85 MHz)
  • 工作电压:2.3 V ~ 3.6 V
  • 工作温度范围:-40 ℃ ~ +85 ℃
  • 待机电流:7 mA(典型/规格请参考数据手册)
  • 页写入时间(Tpp):5.5 ms
  • 块擦除时间(tBE):45 ms(以 4 KB 为准)
  • 擦写寿命:100,000 次
  • 数据保留(TDR):20 年
  • 封装:SOIC-8-208mil(WSOIC-8)

二、功能特性

  • 硬件写保护:通过相应引脚实现外部硬件级写保护,防止意外写入或擦除。
  • 绝对写保护:支持对全部存储区域进行绝对写保护配置。
  • 软件写保护:支持通过命令设置区域性写保护,便于灵活管理存储权限。
  • 上电复位:电源上电时自动复位,确保器件进入已知初始状态,提高系统可靠性。
  • 高速 SPI 接口:支持高达 85 MHz 的 SPI 时钟,适合对数据吞吐有要求的应用。

三、可靠性与寿命

该器件具备工业级可靠性指标,擦写寿命高达 100,000 次,数据在无供电情况下可保持约 20 年(TDR)。页级编程与块级擦除机制,结合合理的磨损均衡(wear leveling)策略,可显著延长系统整体使用寿命,适合要求长期数据保存与频繁写入的场景。

四、应用场景

  • 嵌入式系统固件/引导程序(Boot ROM)存储
  • 工业控制器与通信设备的参数与配置存储
  • 数据记录器与日志系统(事件、诊断数据等)
  • 消费电子与可穿戴设备的资源文件或固件更新介质
  • 需要硬件或软件写保护的安全存储场合

五、设计建议与注意事项

  • 电源与去耦:在 VCC 近端放置适当的去耦电容(如 0.1 μF 与 1 μF 并联),保证在高频 SPI 访问下的电源稳定性。
  • 写保护管理:建议在设计中预留外部控制接口以驱动硬件写保护引脚,关键数据区可同时使用硬件与软件写保护。
  • 擦写与编程策略:采用页写入(512B)与块擦除(4KB)相结合的策略以提升效率;对频繁写入区域实施磨损均衡。
  • 时序与信号完整性:SPI 时钟可达 85 MHz,布线需注意阻抗控制与信号回流,必要时添加小阻抗以抑制反射。
  • 熔断与复位:利用上电复位功能确保器件在上电瞬间进入稳定状态,并在系统设计中考虑在异常情况下的安全恢复流程。

六、封装与选型

AT45DB321E-SHF2B-T 提供 SOIC-8-208mil(WSOIC-8)封装,易于常规 PCB 工艺贴片。选型时请结合系统电压等级(2.3 V ~ 3.6 V)、工作温度与写入/擦写频率,确认所需写保护功能与封装形式,必要时参阅瑞萨完整数据手册以获取引脚功能、时序图与典型应用电路。

总结:AT45DB321E-SHF2B-T 以其 32Mbit 大容量、512Byte 页结构、85MHz 高速 SPI、完备的写保护机制与工业级可靠性,适合对数据完整性与长期稳定性有较高要求的嵌入式与工业应用。欲获得详细命令集、寄存器说明及典型应用电路,请参考瑞萨官方技术资料与数据手册。

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