WMSIC Electronic Components

RENESAS ISL6208BIRZ-T ISL6208BIRZ

ModelISL6208BIRZ-T
PackageDFN-8(2x2)
BrandRENESAS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 22+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
RENESAS ISL6208BIRZ-T
Type
RENESAS
Minimum package
6000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
RENESAS
Electronic Component
ISL6208BIRZ-T
Electronic Component
1
Package
DFN-8(2x2)
Electronic Component
(UVP)
Electronic Component
Gate Driver IC
Electronic Component
0.228g
Electronic Component
1
Features
Built-in Diode
Electronic Component
BM0264858900
Operating Temperature
40℃~+100℃
Operating Voltage
4.5V~5.5V
Load Type
MOSFET
Driver
Electronic Component
Current(IOH)
2A

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ISL6208BIRZ-T 产品概述

一、主要特性

ISL6208BIRZ-T 为半桥栅极驱动器,非反相输出,适用于驱动功率 MOSFET 的高/低侧组合。器件在 4.5V ~ 5.5V 工作电压下提供较强瞬态驱动能力:灌电流(IOL) 4A、拉电流(IOH) 2A,典型上升/下降时间均约 8ns,静态电流(Iq) 极低约 80µA,工作温度范围 -40℃ ~ +100℃。器件具备欠压保护(UVP)、使能关断功能、内置自举二极管及交错导通(防止同时导通)保护,封装为 DFN-8 (2x2) 带底部散热焊盘。

二、功能与行为概述

  • 非反相输入:输入信号为高电平时对应输出为高电平,便于与控制逻辑直接接口。
  • 使能关断:通过 EN 引脚可快速禁能驱动输出,实现系统待机或故障保护。
  • 内置自举二极管:简化高侧驱动电荷泵布局,只需外接自举电容即可完成高侧驱动供电。
  • 交错导通保护:内部逻辑防止高低侧 MOSFET 同时导通,降低短路风险,提高系统可靠性。
  • 欠压保护:VCC 不足时自动锁定输出,避免在不稳定供电下误驱动 MOSFET。

三、典型应用场景

  • 同步降压转换器(DC-DC)高/低侧 MOSFET 驱动
  • 电机驱动与 H 桥电路中的半桥单元
  • 宽电压电源管理、功率转换和开关电源模块
  • 高频脉冲功率开关、Class D 放大器驱动

四、封装与热管理

DFN-8 (2x2) 带焊盘(EP)提供良好热传导路径,建议在 PCB 下方铺设充足的焊盘铜箔并通过过孔连至多层电源地铜层,以降低结温。高瞬态电流换热集中在引脚和底部焊盘,良好焊接与散热设计可显著提高连续工作能力。

五、设计与布局建议

  • 电源与自举:VCC 和自举电容(Cboot)尽量靠近芯片 VCC、HB 引脚布局,VCC 做低 ESR 去耦(10µF + 0.1µF)。
  • 引线阻抗:栅极连接线短而宽,输出侧加入小阻值串联门极电阻(Rgate)以控制 dv/dt、限流并调节上/下 MOSFET 的切换速度。
  • 接地与回流:为减少振铃与 EMI,VCC、GND、自举回路及功率回路的回流路径要最小化并隔离模拟/数字信号。
  • 保护元件:在必要时并入 RC 吸收或 TVS 以抑制开关尖峰,避免损坏驱动器或 MOSFET。
  • 测试与验证:在不同负载、不同死区时间下验证交错导通保护与欠压行为,确认热稳定性与 SOA 符合预期。

六、选型与注意事项

ISL6208BIRZ-T 适合要求响应快、驱动电流较大且空间受限的半桥应用。选型时关注 VCC 工作范围(4.5V~5.5V)、峰值电流能力与封装散热限制;在高频或大电流场合需额外验证热耗散与 PCB 散热设计。若需更详细的引脚排列、时序图与绝对最大额定值,请参照厂方器件数据手册以获得完整规范与应用电路参考。

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