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RENESAS AT25DF641A-SH-T AT25DF641A
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- RENESAS AT25DF641A-SH-T
- Type
- RENESAS
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- RENESAS
- Electronic Component
- AT25DF641A-SH-T
- Electronic Component
- 1
- Package
- SOIC-8-208mil
- Electronic Component
- NOR FLASH
- Electronic Component
- 0.001g
- Electronic Component
- 1
- Electronic Component
- BM0264889574
- Electronic Component
- 64Mbit
- Operating Temperature
- 40℃~+85℃
- Operating Voltage
- 2.7V~3.6V
- Current
- 5uA
- Interface Type
- SPI
- Electronic Component
- 100000
- Clock Frequency(fc)
- 100MHz
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AT25DF641A-SH-T 产品概述
一、主要特性
AT25DF641A-SH-T 是一款容量为 64Mbit 的串行 NOR 闪存器件，采用标准 SPI 接口，最高工作时钟频率 fc 可达 100MHz，工作电压范围 2.7V ～ 3.6V，适配常见 3.3V 系统。器件封装为 SOIC-8（208mil / WSOIC-8），品牌：RENESAS（瑞萨）。该器件定位为通用型外部程序存储与数据存储解决方案，兼顾读速率、低功耗与长期可靠性。
二、规范与电气参数
- 存储容量：64 Mbit（8 MByte）
- 接口类型：SPI（兼容主流 SPI 控制器）
- 时钟频率：最高 100 MHz
- 工作电压：2.7 V ～ 3.6 V
- 待机电流：典型 5 µA（低功耗待机模式，便于电池供电设备）
- 工作温度范围：-40 ℃ ～ +85 ℃
三、性能与可靠性
- 页写入时间 (Tpp)：约 2.5 ms（单页编程）
- 块擦除时间 (tBE)：约 600 ms（按 64 KB 块计）
- 擦写寿命（耐久性）：典型 100,000 次擦写周期
- 数据保持期 (TDR)：典型 20 年
以上参数表明器件适合需要中高耐久和长期数据保留的嵌入式应用，但对频繁小量写入场景建议配合磨损均衡或缓存策略。
四、封装与机械信息
- 封装形式：SOIC-8，208mil（WSOIC-8）
- 引脚兼容常见 SOIC-8 底座，便于 PCB 布局与替换。
机械和焊接工艺请参考封装数据手册，注意焊接温度曲线与 ESD 防护要求。
五、典型应用场景
- 嵌入式系统的固件存储和引导代码（Boot ROM）
- 配置参数存储、系统镜像与备份数据
- 无线终端、工业控制、消费类电子的固件升级（FOTA）与日志记录
- 需要低功耗待机并且读速度要求较高的存储扩展
六、设计注意事项
- 编程前必须进行块擦除：写入前请确认目标扇区已擦除；使用 64KB 对齐的擦除策略可优化效率。
- 电源与时钟：SCLK 不应超过 100 MHz；为保证信号完整性，布线应尽量短且使用阻抗匹配，VCC 处加旁路电容以抑制瞬态电流。
- 电源序列与复位：避免在不稳定电源下操作写/擦命令；必要时在片选（CS）或写保护引脚上加控制。
- 耐久与数据完整性：针对高频写入场合建议实现软件层磨损均衡与坏块管理；关键数据考虑冗余备份。
- 功耗管理：利用器件的低功耗待机模式（典型 5 µA）以延长电池寿命，尽量在空闲时进入省电状态。
七、总结
AT25DF641A-SH-T 以其 64Mbit 容量、高达 100MHz 的 SPI 读速率、宽工作电压与低待机电流，提供了在嵌入式与工业级应用中可靠且灵活的非易失性存储选择。凭借 100k 次擦写寿命和 20 年的数据保持能力，适合需要长期存储、可靠更新与中等频率写操作的系统。设计时注意电源、擦写策略与磨损管理，可最大化器件寿命与系统稳定性。
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