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RENESAS AT45DB641E-MWHN-T AT45DB641E
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- RENESAS AT45DB641E-MWHN-T
- Type
- RENESAS
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- RENESAS
- Electronic Component
- AT45DB641E-MWHN-T
- Electronic Component
- 1
- Package
- VDFN-8-EP(6x8)
- Electronic Component
- NOR FLASH
- Electronic Component
- 0.001g
- Electronic Component
- 1
- Features
- positions
- Electronic Component
- BM0264679046
- Electronic Component
- 66Mbit
- Operating Voltage
- 1.7V~3.6V
- Current
- 7mA
- Interface Type
- SPI
- Electronic Component
- 100000
- Clock Frequency(fc)
- 85MHz
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AT45DB641E-MWHN-T 产品概述
一、规格概览
AT45DB641E-MWHN-T 为串行 NOR Flash（DataFlash）器件，标称容量 64 Mbit（组织为 32K pages × 264 bytes），通过 SPI 接口进行访问。器件工作时钟最高可达 85 MHz，工作电压范围宽（1.7 V ~ 3.6 V），适用于多种低压系统。封装为 VDFN-8-EP（6 mm × 8 mm），便于高密度 PCB 集成。
二、主要功能特性
- 支持硬件写保护、绝对写保护与软件写保护，多层保护机制保障数据安全。
- 上电复位（POR）功能，保证上电初始化稳定可靠。
- 快速 SPI 传输，高速访问与较低的总线占用。
- 数据可靠性设计：擦写寿命可达 100,000 次，数据保持期（TDR）约 20 年。
三、核心参数与性能
- 接口类型：SPI（兼容标准 SPI 时序）。
- 存储容量：64 Mbit（32K × 264 B 页面结构）。
- 时钟频率（fc）：最高 85 MHz，支持高性能数据读取与编程。
- 工作电压：1.7 V ~ 3.6 V，适配 1.8 V 与 3.3 V 系统。
- 待机电流：7 mA（请参照具体工作模式与待机状态的典型值）。
- 块擦除时间（tBE）：典型 25 ms。
- 擦写寿命：100,000 次（典型规格）。
- 数据保留：20 年（TDR）。
四、典型应用场景
适用于需要非易失性大容量存储且对可靠性有较高要求的嵌入式系统，包括但不限于：固件/引导存储、数据记录设备、工业控制器、消费电子固件更新与存储、车载信息娱乐系统的配置存储等。
五、设计与使用要点
- 电源与上电序列：器件支持宽电压，但建议加稳压与上电去抖动设计，保证 POR 正确触发。
- SPI 时钟与 PCB 布线：85 MHz 为较高速率，建议缩短 MOSI/MISO/SCK 走线、使用阻抗匹配并做好终端与旁路电容（典型 0.1 µF）布局。
- 写保护策略：结合硬件（WP 引脚）、绝对保护与软件保护策略用于关键区域保护，避免误写或固件损坏。
- 寿命管理：针对频繁写入的数据区建议做擦写均衡或使用日志式写入方式，延长可用寿命。
- 擦写与编程：页编程与块擦除操作需遵循时序规范，关注 tBE（25 ms）与器件忙/空闲状态指示。
六、封装与生产适配
VDFN-8-EP（6×8 mm）带底部散热/接地垫（EP），安装时注意焊盘与露铜垫的焊接工艺，确保散热与可靠接地；同时参考厂商推荐的 PCB land-pattern 与回流焊工艺参数以提高良率。
总结：AT45DB641E-MWHN-T 以其大容量、宽电压、硬件/软件多重保护与较高耐用性，适合对可靠性与长期数据保存有要求的嵌入式存储应用。设计时重点关注电源完整性、SPI 高速信号完整性与写保护策略，可充分发挥其性能与寿命优势。
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