WMSIC Electronic Components

RENESAS AT25SF081B-SSHB-T AT25SF081B

ModelAT25SF081B-SSHB-T
PackageSOP-8
BrandRENESAS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
RENESAS AT25SF081B-SSHB-T
Type
RENESAS
Minimum package
4000 未知

Technical parameters

Electronic Component
Electronic Component
Electronic Component
RENESAS
Electronic Component
AT25SF081B-SSHB-T
Electronic Component
1
Package
SOP-8
Electronic Component
NOR FLASH
Electronic Component
0.001g
Electronic Component
1
Electronic Component
BM0263510605
Electronic Component
8Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
2.7V~3.6V
Current
25uA
Interface Type
SPI
Electronic Component
100000
Clock Frequency(fc)
108MHz

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AT25SF081B-SSHB-T 产品概述

一、产品简介

AT25SF081B-SSHB-T 是一款容量为 8Mbit 的串行 NOR FLASH 存储器,支持 SPI 四 I/O(Quad I/O)操作,最高工作时钟频率可达 108 MHz。器件工作电压范围为 2.7V~3.6V,工作温度范围为 -40℃~+85℃,适合工业级与消费类设备中对代码储存与数据保存的需求。

二、主要特点

  • 存储容量:8 Mbit(1 MByte)
  • 接口类型:SPI,支持四线 I/O(Quad I/O)以提高读速率
  • 最大时钟频率:108 MHz(高速串行读取)
  • 工作电压:2.7V~3.6V,兼容 3.3V 系统
  • 待机电流:25 μA,具有低功耗待机能力
  • 擦写寿命:100,000 次(典型块擦写耐久)
  • 数据保存期(TDR):20 年,适合长期存储固件与配置数据

三、电气与性能参数

  • 页写入时间(Tpp):约 400 μs(单页编程)
  • 块擦除时间(tBE):约 210 ms(以 32 KB 块为例)
  • 支持高速读操作以满足代码执行或快速数据读取需求
  • 建议在电源引脚加入适当的去耦电容以保证信号完整性和稳压

四、可靠性与寿命

器件按照典型 NOR FLASH 规范设计:单页编程与块擦写循环达 1e5 次,数据保留能力可达 20 年(在规定温度与写入条件下)。在高温或频繁写入应用中,应评估寿命衰减并设计磨损均衡或冗余机制。

五、典型应用

  • MCU/MPU 引导程序(Boot ROM)与固件存储
  • 嵌入式系统配置与参数存储
  • 消费电子、工业控制、网络设备中的代码与数据存储
  • 需要快速随机读取的只读或少量写入数据场景

六、设计与使用建议

  • 写操作前必须先执行写使能(WREN),并在写入/擦除完成后查询就绪状态位以避免中断操作。
  • 为保证高速读写稳定,建议在 VCC 和 GND 之间放置 0.1 μF 陶瓷去耦电容,靠近器件电源脚布置。
  • 在四 I/O 模式下注意 IO 引脚的上拉/下拉与驱动能力,避免在片选(CS)无效时出现总线竞争。
  • 对于频繁写入场景,采用磨损平衡策略并做好坏块管理以延长使用寿命。
  • 封装信息请以厂家规格书为准,样品与批量采购前建议确认管脚与封装形式(如 SOIC、WSON 等)。

如需更详细的命令集、电气时序图或封装管脚表,请参考厂商数据手册或提供该型号的完整规格书以便进一步确认与设计对接。

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