WMSIC Electronic Components

ST STD85N3LH5 N-Channel MOSFET STD85N3LH5

ST STD85N3LH5 N-Channel MOSFET STD85N3LH5
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Product image

ModelSTD85N3LH5
PackageDPAK
BrandST
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 14+

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Technical data

Product details

19 specifications

Core information

Product name
ST(STMicroelectronics) STD85N3LH5
Type
ST
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ST(STMicroelectronics)
Electronic Component
STD85N3LH5
Electronic Component
1
Package
DPAK
Electronic Component
MOSFET
Electronic Component
MOSFET
Electronic Component
0.549g
FETType
N
Electronic Component
1
FET Type
N
Electronic Component
BM0000283636
Type
Surface Mount(SMT)
Operating Temperature
175°C（TJ）
Package / Housing
TO-252-3, DPak, SC-63
Vgs
±22V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：STD85N3LH5 N-通道 MOSFET

一、基本信息

STD85N3LH5是一款由意法半导体（STMicroelectronics）生产的N通道金属氧化物场效应管（MOSFET），其主要特征为高效能的开关能力和高电流处理能力。这款元器件在封装形式上采用TO-252-3（即DPAK），具有良好的散热性能和体积小巧的优势，方便在表面贴装(SMT)的应用环境中使用。

二、产品特性

  1. 封装与结构

    • STD85N3LH5采用DPAK封装，具有2引线和接片设计，适合表面贴装。这种封装形式不仅能有效简化PCB布局，还能降低板上空间的占用。

  2. 电气参数

    • 漏源极电压（Vdss）: 30V，适用于低至中等电压应用。
    • 连续漏极电流（Id）: 80A（在85°C的热条件下），能够满足高电流负载的需求。
    • 导通电阻（Rds(on)）: 在10V的栅源电压下，导通电阻最高可达5毫欧，在40A的漏极电流下，显示出极低的功耗特性。
    • 栅源阈值电压（Vgs(th)）: 最大值为2.5V @ 250µA，确保MOSFET在较低电压下即可启动，有利于降低控制电压的要求。
    • 栅极电荷（Qg）: 在5V时，最大为14nC，表示该器件在工作中的开关响应速度。
    • 工作温度: 该元器件能够在高达175°C的环境中稳定工作，适合高温应用。

  3. 功率管理

    • 功率耗散（Pd）: 最大可达70W（在Tc条件下），为高功率应用提供了便利。
    • 适应性强，可以在各种条件下表现出良好的热特性和电气性能，确保其在实际应用中的可靠性和稳定性。

三、应用场景

STD85N3LH5广泛应用于多个领域，特别是在需要高电流、高效率和高温环境下的场合。具体应用包括但不限于：

  • 电源管理: 在开关电源、DC-DC转换器等设备中，作为高效的开关元件。
  • 电机控制: 在电动机驱动模块中，作为功率放大器，以实现精确的电机控制。
  • 电池管理系统: 在电池充电和放电管理中，帮助提高整体能量效率。
  • LED驱动: 在高功率LED驱动电路中，用于实现有效的电流控制和温度管理。

四、市场竞争力

STD85N3LH5凭借其低导通电阻、宽工作温度范围、高电流响应和良好的散热性能，具备了显著的市场竞争力。与其他同类产品相比，它能够在更高的电流和温度下工作，同时保持低的功耗和高的开关速率，适合先进的工业及消费类电子产品。

五、总结

总的来说，STD85N3LH5是一款高效能、高负载能力的N通道MOSFET，凭借其优越的电气特性和广泛的应用场景，使其成为工程师和设计师在进行电源管理、电机控制及其他高功率应用时的重要选择。通过采用DPAK封装，该元器件不仅提供了出色的热管理，还确保了在现代电子产品设计中的兼容性和可靠性。

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