WMSIC Electronic Components

ST 1N5819 Schottky Diode 1N5819

Model1N5819
PackageDO-41
BrandST
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ST(STMicroelectronics) 1N5819
Type
ST
Unit
Electronic Component
Minimum package
2000 盒

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ST(STMicroelectronics)
Electronic Component
1N5819
Electronic Component
1
Package
DO-41
Electronic Component
Schottky Diode
Electronic Component
0.408g
Electronic Component
1
Electronic Component
BM69419142
Current
1A
Diode
1
Current(Ir)
500uA@40V
(Vf)
550mV@1A
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

1N5819 产品概述

一、产品基本信息

1N5819 是一款高性能的肖特基二极管,广泛应用于各类电子电路中,尤其适用于需要低正向压降和快速恢复特性的场合。这款二极管由意法半导体(STMicroelectronics)制造,采用 DO-41 封装,具有优良的热稳定性和可靠性,能够满足多种工业和消费电子应用的需求。

二、基础参数

1N5819 的主要性能参数如下:

  • 安装类型:通孔(Through Hole),适用于多种PCB设计,便于手工焊接和自动化组装。
  • 二极管类型:肖特基二极管,这种类型的二极管具有较低的正向导通电压和极快的恢复特性,非常适合高频开关电路。
  • 电流 - 平均整流 (Io):1A,能够承受的最大整流电流适用于大多数一般负载。
  • 不同 If 时电压 - 正向 (Vf):550mV @ 1A,这一低正向电压意味着在高电流状态下产生的功率损耗较低,从而提高了电路的整体效率。
  • 电压 - DC 反向 (Vr)(最大值):40V,适合大多数应用场景,同时能够有效防止因为电压瞬变导致的损坏。
  • 工作温度 - 结:150°C(最大),适应宽广的工作环境,确保在高温情况下仍然能够稳定工作。
  • 不同 Vr 时电流 - 反向泄漏:500µA @ 40V,优秀的反向泄漏特性,降低了待机功耗。

三、应用领域

1N5819 广泛应用于以下几种场合:

  1. 开关电源:在开关电源设计中,由于其低压降和快速反应特性,这款二极管能有效提高转换效率,降低热损耗。

  2. 直流电机驱动:在直流电机控制电路中,1N5819 可用于自由轮二极管,以保护电路不受反向电压的影响。

  3. 整流电路:1N5819 可用于整流器设计,实现高效率的交流电直流转化,尤其适用于低电压、低功耗的场合。

  4. 电池充电器:在电池充电器中,肖特基二极管的低正向压降可大大减少能量损失,提高充电效率。

  5. LED驱动电路:在LED驱动的应用中,这款二极管可以防止反向电流影响LED的工作状态,确保其长时间稳定运行。

四、优势与特点

1N5819 作为肖特基二极管,相较于传统二极管具有以下优势:

  • 低正向压降:550mV 的正向压降显著提升了电路的效率,适合对能量损耗有严格要求的应用。
  • 快速恢复特性:快速恢复小于 500ns,能够有效减少开关损耗,适合高频应用。
  • 低反向泄漏电流:适合静态电流较小的电路,有助于提高整体系统的能效。
  • 高工作温度范围:高达 150°C 的工作温度使其在恶劣环境中仍能保持优良表现,增加了电路设计的灵活性。

五、总结

1N5819 肖特基二极管以其优异的电性能、可靠的工作特性和广泛的应用场景,已成为现代电子设备中不可或缺的重要元件之一。在当前对能源效率和电路可靠性要求日益提高的背景下,1N5819 作为高效、稳定的补充选择,无疑是设计工程师的理想选择。通过合理的应用,用户将能够在更高的效率和稳定性中推进其电子产品的研发与投入市场的步伐。

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