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ST CBTVS2A12-1F3 TVS Diode CBTVS2A12
Configuration
1 options
Configuration
21+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST(STMicroelectronics) CBTVS2A12-1F3
- Type
- ST
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ST(STMicroelectronics)
- Electronic Component
- CBTVS2A12-1F3
- Electronic Component
- 1
- Package
- FlipChip-4
- Electronic Component
- Electronic Component
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.001g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 180pF
- Electronic Component
- BM0003115244
- Operating Temperature
- 30℃~+85℃
- Voltage
- 15V
- Electronic Component
- IEC 61000-4-2
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：CBTVS2A12-1F3 瞬态抑制二极管
在当今快速发展的电子技术领域，瞬态电压抑制器（TVS）作为保护电路的重要元件，扮演着至关重要的角色。CBTVS2A12-1F3是由意法半导体（STMicroelectronics）生产的一款高效能瞬态电压抑制二极管，专为保护敏感电子元件免受电压瞬态冲击而设计。
主要特点
类型与结构： CBTVS2A12-1F3属于齐纳类型的瞬态抑制二极管，采用单向通道设计，包封形式为表面贴装型（SMD）。其封装类型为FlipChip-4（FCBGA），这种设计不仅减少了元器件所占空间，同时也提高了电器性能，便于在设计中实现高密度集成。
电压参数：
- 反向断态电压（Vr）：典型值为10V，表示在正常工作条件下元件可以承受的反向电压。
- 击穿电压（Vbr）：最小值为12V，这意味着在此电压时元件开始导通，以保护下游电路。
- 链接电压（最大值）：在不同的Ipp条件下，阻塞电压最高可达到15V，确保产品在短时间内具有良好的瞬态处理能力。
尖峰脉冲承受能力： 本产品能够承受的峰值脉冲电流（Ipp）为1A（在10/1000µs和8/20µs脉冲标准下），表明它能有效吸收和消散来自电源线路或其他源头的瞬态过电流。其最大功率为44W，确保了在瞬态事件发生时，电路能够保持稳定，并有效避免损坏。
应用场景： CBTVS2A12-1F3广泛应用于各类电子产品中，尤其在对瞬态电压具有高度敏感的应用场合，如通信设备、消费电子、计算机外部接口及其他工业控制系统等。其高效能和稳定性使其成为保护电路的理想选择。
环境适应性与可靠性： 该元件经过严格的测试，以确保在不同环境条件下的可靠性和表现。其持续的工作温度范围和合理的热管理设计使得CBTVS2A12-1F3能够在高热环境或要求较高的运作条件下使用，从而延长了产品的使用寿命。
逻辑与优势
意法半导体作为全球知名的半导体解决方案供应商，其产品以高性能、高质量而闻名。CBTVS2A12-1F3不仅承继了ST的优良传统，还以其独特的设计和优越的性能在瞬态电压抑制器领域内树立了良好的口碑。
综上所述，CBTVS2A12-1F3瞬态抑制二极管凭借其出色的电压抑制特性、良好的热稳定性和适应性，以及广泛的应用领域，无疑是电子电路设计中不可或缺的保护器件。其设计的高度集成性及有效的防护能力，使得设计工程师在保护敏感电子元件时能够更加安心与高效。选用CBTVS2A12-1F3，将为您的电路提供坚实可靠的电源保护支持。
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