WMSIC Electronic Components

ST STF18N60M2

ModelSTF18N60M2
PackageTO-220FP
BrandST
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ST(STMicroelectronics) STF18N60M2
Type
ST
Unit
Electronic Component
Minimum package
1000 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ST(STMicroelectronics)
Electronic Component
STF18N60M2
Electronic Component
1
Package
TO-220FP
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
2.6g
Electronic Component
1
Electronic Component
BM0265750625
Power Dissipation(Pd)
25W
Electronic Component
Electronic Component
Electronic Component
1000
Voltage(Vdss)
600V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

STF18N60M2 产品概述

概述

STF18N60M2 是一款由意法半导体(STMicroelectronics)制造的高性能金属氧化物半导体场效应管(MOSFET),采用 N 通道配置。此款 MOSFET 以其优秀的漏源电压、连续漏极电流和低导通电阻,广泛应用于高压电源转换、电动机驱动和开关电源等各类电力电子设备中。STF18N60M2 的设计旨在满足高效率和高可靠性需求,并支持苛刻的工作环境。

关键参数

  • 漏源电压(Vdss): 600V

    • 这使其适用于高电压应用,能够有效的承载高达 600V 的电压。
  • 连续漏极电流(Id): 13A(在 25°C 时)

    • 该参数表明其能承受的最大电流,使其非常适合需要较高电流的应用场合。
  • 栅源极阈值电压(Vgs(th)): 约4V @ 250µA

    • 确保MOSFET在较低的电压下能顺利导通,提高了在驱动电路中使用的灵活性。
  • 导通电阻(Rds(on)): 280mΩ @ 6.5A, 10V

    • 低导通电阻意味着更少的功耗和热量产生,提高了整体能效。
  • 功率耗散(Pd): 25W(在 25°C 时)

    • 较高的功率耗散能力使其能够在较高功率的工作条件下稳定运行。
  • 工作温度范围: -55°C ~ 150°C(TJ)

    • 宽广的工作温度范围适合各种严苛的环境条件,确保了元件在极端条件下的可靠性。
  • 栅极电荷(Qg): 21.5nC @ 10V

    • 较小的栅极电荷使此器件能实现更快速的开关,增强了系统的响应能力。
  • 封装类型: TO-220

    • 这种封装提供良好的散热性能和易于安装的特性,适合于各种 PCB 打印电路板中使用。

应用领域

STF18N60M2 MOSFET 由于其出色的电性能,广泛应用于以下领域:

  1. 开关电源:其高漏源电压和连续漏极电流使其能在开关电源中高效传输电力,减少能量损耗。
  2. 电动机驱动:在电机控制模块中,凭借极低的导通电阻,增强了电机的启动和效率。
  3. 功率放大器:可用于各种功率放大电路,确保系统稳定且高效地运行。
  4. 电池管理系统:适用于电池的充电和保护电路,确保安全和效能。
  5. 便携式电子设备:其优良的电流承载能力和小巧的封装,使其适合于需要高效能的小型设备中。

结论

STF18N60M2 MOSFET 作为一款高性能的 N 通道场效应管,凭借其可靠的性能参数和多元化的应用范围,成为现代电子设计中的重要元件。无论是在电源管理、工业自动化还是消费电子产品中,该产品均展现出极高的实用价值和市场竞争力,使其成为工程师和设计师的理想选择。选择 STF18N60M2,可以帮助用户在开发和设计过程中有效实现高效、经济和可靠的电力解决方案。

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