WMSIC Electronic Components

ST STD60NF06T4

ModelSTD60NF06T4
PackageTO-252(DPAK)
BrandST
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ST(STMicroelectronics) STD60NF06T4
Type
ST
Unit
Electronic Component
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ST(STMicroelectronics)
Electronic Component
STD60NF06T4
Electronic Component
1
Package
TO-252(DPAK)
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.475g
Electronic Component
1
Electronic Component
BM0227780021
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
110W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

STD60NF06T4 产品概述

一、产品概述

STD60NF06T4 是由意法半导体(STMicroelectronics)公司生产的一款高性能 N 沟道 MOSFET,旨在满足节能和高功率应用的需求。该器件的最大漏源电压为 60V,能够在高达 60A 的连续漏极电流下运行,适合于多种电力电子应用。本器件采用表面贴装型 DPAK(TO-252-3)封装,设计紧凑,便于在有限空间内实现高效散热和电气连接。

二、主要规格参数

  1. 漏源电压 (Vdss):60V

    • 该器件可以承受高达 60V 的漏源电压,使其适用于工业、电源管理及汽车电子等高电压环境。
  2. 连续漏极电流 (Id):60A(25°C 时)

    • 此规格表明,STD60NF06T4 在常温下可以安全地支持高达 60A 的连续电流,提供优异的电流承载能力。
  3. 栅源极阈值电压 (Vgs(th)):4V @ 250µA

    • 栅极阈值电压相对较低,使其较易被驱动,同时也保证了其对低电平信号的良好响应能力。
  4. 漏源导通电阻 (Rds(on)):16mΩ @ 30A, 10V

    • 导通电阻小,降低了功率损耗,提高了运行效率,适合频繁开关的应用场合。
  5. 最大功率耗散:110W (Ta=25°C)

    • 此功率耗散能力允许器件在高负载条件下长时间运行而不至于过热,确保了系统的可靠性。
  6. 工作温度范围:-55°C ~ 175°C (TJ)

    • 广泛的工作温度范围使该 MOSFET 适用于严苛环境,如汽车/工业应用,确保其在各种环境条件下的稳定性。
  7. 封装类型:DPAK (TO-252-3)

    • 表面贴装封装(DPAK)具有良好的散热性能,适合高密度布局。
  8. 输入电容 (Ciss):1810pF @ 25V

    • 该输入电容提供了较低的输入信号延迟,适用于高频开关应用。

三、应用领域

STD60NF06T4 由于其高电流承载能力和低导通电阻,广泛应用于:

  • DC-DC 转换器:用作开关元件,提高转换效率。
  • 电机驱动:用于更高效的电机控制,提供更好的动态响应。
  • 开关电源:适用于各种开关电源环境。
  • 电池管理系统:用于电池充放电过程中的开关控制。
  • 汽车电子:如电源管理、LED 驱动及负载开关等。

四、总结

意法半导体的 STD60NF06T4 是一款性能强劲的 N 沟道 MOSFET,具备高漏源电压、低导通电阻以及高连续电流承载能力,能够有效满足现代电子设备对高效能和稳定性的迫切需求。其广泛的工作温度范围及优良的封装特性使其在多种应用中极具灵活性,尤其适合于对功率和热管理提出高要求的工业和汽车电子市场。选择 STD60NF06T4,将是实现设计优化和性能提升的重要一步。

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