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ST STTH1L06RL
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
18
specifications
Core information
- Product name
- ST(STMicroelectronics) STTH1L06RL
- Type
- ST
- Minimum package
- 5000
Technical parameters
- Electronic Component
- ST(STMicroelectronics)
- Electronic Component
- STTH1L06RL
- Electronic Component
- 1
- Package
- DO-41
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.408g
- Electronic Component
- 1
- Electronic Component
- BM0230028532
- Current
- 1A
- Current(Ir)
- 75uA@600V
- (Vf)
- 1.3V@1A
- Electronic Component
- 5000
- Voltage Rating(Vr)
- 600V
- (Trr)
- 80ns
- Surge Current (Ifsm)
- 30A
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
STTH1L06RL 产品概述
一、概述
STTH1L06RL 是意法半导体（ST）推出的一款快恢复/高效率整流二极管，额定反向耐压达600V，额定整流电流1A，采用 DO-41 轴向封装。器件在中高压、开关频率下具有较低的正向压降和较短的反向恢复时间，适用于中等功率的开关电源和整流场合。
二、主要规格
- 正向压降 (Vf)：1.3V @ IF = 1A
- 直流反向耐压 (Vr)：600V
- 额定整流电流：1A（连续）
- 反向电流 (Ir)：75μA @ Vr = 600V
- 反向恢复时间 (Trr)：80ns
- 非重复峰值浪涌电流 (Ifsm)：30A
- 封装：DO-41（轴向）
三、性能特点
- 快恢复特性：Trr≈80ns，比普通整流二极管具有更低的开关损耗和更小的浪涌尖峰，适合中频开关场合。
- 较低正向压降：1.3V@1A 可降低导通损耗，提高整流效率。
- 高耐压等级：600V 额定反向电压，适用于高压整流与功率转换。
- 一定的浪涌能力：30A 峰值浪涌电流能够应对短时的启动或故障电流冲击。
- DO-41 轴向封装，便于通孔焊接与手工装配，适合维修与样机测试。
四、典型应用
- 开关电源（SMPS）输出整流器
- 开关变换器的续流/回输二极管
- 电池充电器、适配器与LED 驱动电源
- 功率因数校正（PFC）电路的中高压段
- 一般工业与民用高压整流场合
五、封装与热管理
DO-41 为通孔轴向封装，便于机械固定与散热延伸，但器件本身散热能力有限。在1A连续工作条件下，需考虑良好散热路径与合适的铜箔面积；高环境温度或频繁浪涌时建议适当降额使用并注意器件结温限制。
六、选型与使用建议
- 若应用对导通损耗极为敏感，可考虑更低 Vf 的器件（例如在低压场合使用肖特基）；但在600V 级别，快恢复二极管通常比肖特基更具成本与可靠性优势。
- 注意反向漏电随温度上升显著增加，设计时按最高工作温度评估 Ir 对系统影响。
- 在高频开关场合，评估 Trr 对开关损耗与电磁干扰的影响，必要时配合缓冲网络或软开关技术以降低噪声与应力。
- 对于浪涌或并联使用，遵循厂商的并联指南以避免不均流问题。
本器件在中高压整流与中等频率开关应用中提供了性能与成本的良好平衡，是常见的通用快恢复整流选择。若有具体电路条件（工作温度、开关频率、占空比等），可进一步进行损耗估算与热设计优化。
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